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Integrated Circuits and Semiconductor Failure Analysis

142 та иш

  1. Capacitance transient spectroscopy of radiation defects on the interface Si-SiO 2 of silcon MIS-structures

    Shakhrukh Kh. Daliev, Sharifa B. Utamuradova, Kh.S. Daliev

    МақолаSilicon and Solar Cell Technologies20040 иқтибос
    ABI

  2. Investigation of γ-radiation defect formation at the Si-SiO 2 interface

    S.Z. Zaynabidinov, Sh. Kh. Yulchiev, Р. Алиев

    МақолаIntegrated Circuits and Semiconductor Failure Analysis20040 иқтибос
    ABI

  3. Influence of Irradiation on Excess Currents in SiC pn Structures

    Anatoly M. Strel’chuk, Vitalii V. Kozlovski, A. А. Lebedev +1

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20050 иқтибос
    ABI

  4. RBS analysis of ions implanted in light substrates exposed to hot plasmas laser-generated at PALS

    L. Torrisi, S. Gammino, A. Picciotto +5

    МақолаIon-surface interactions and analysisRadiation effects and defects in solids20050 иқтибос
    ABI

  5. Study of Ion Induced Damage in 4H-SiC

    Alessandro Lo Giudice, P. Oliveira, F. Fizzotti +6

    МақолаIntegrated Circuits and Semiconductor Failure AnalysisMaterials science forum20050 иқтибос
    ABI

  6. <title>Comparative study of ion channeling and implantation into Si(110), SiC(110), GaP(110), AsGa(110)</title>

    A. M. Rasulov, A.A. Dzhurakhalov, F. F. Umarov +2

    МақолаIon-surface interactions and analysisProceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE20050 иқтибос
    ABI

  7. Layer-by-Layer Sputtering and Ultrathin Ion Implantation by Low-Energy Grazing Ion Bombardment

    Abdurauf A. Dzhurakhalov, S.E. Rahmatov, N.A. Teshabaeva +1

    МақолаIon-surface interactions and analysisMRS Proceedings20050 иқтибос
    ABI

  8. Potential sputtering of LiF and SiC under bombardment by Ar q+ (q = 1-6) multicharged ions

    Б.Г. Атабаев

    МақолаIon-surface interactions and analysis20050 иқтибос
    ABI

  9. Development of the Lund Single Ion Hit Facility at the new sub micrometer beamline

    Natalia Arteaga-Marrero, Jan Pallon, Vaida Auzelyte +5

    МақолаIon-surface interactions and analysisLund University Publications (Lund University)20060 иқтибос
    ABI

  10. Ion Beams in Nanoscience and Technology

    Ragnar Hellborg, Harry J. Whitlow, Yanweng Zhang

    МақолаIon-surface interactions and analysis20090 иқтибос
    ABI

  11. Low-field ion microscopy

    V. A. Ksenofontov, E. V. Sadanov, O. A. Velikodnaya

    МақолаIon-surface interactions and analysisTechnical Physics20090 иқтибос
    ABI

  12. Tunable SiO2/Si-based nanostructures

    А. Н. Георгобиани, A. É. Atamuratov, U. A. Aminov +1

    МақолаAdvanced Surface Polishing TechniquesInorganic Materials20090 иқтибос
    ABI

  13. Limits of applicability of a time-of-flight ion-mass analyzer in uncovering partial currents of ions emitted by pulsed laser ion sources

    J. Krása, L. Láska, K. Rohlena +5

    МақолаIon-surface interactions and analysisRadiation effects and defects in solids20100 иқтибос
    ABI

  14. Computer simulation of layer‐by‐layer sputtering at grazing low‐energy ion‐surface interactions

    F. F. Umarov, A.A. Dzhurakhalov

    МақолаIon-surface interactions and analysisSurface and Interface Analysis20120 иқтибос
    ABI

  15. Effect of rate of dose build-up of manganese ions on changes in mechanical properties, morphology, and composition of surface layers of carbon steel

    В. Л. Воробьев, П. В. Быков, V. Ya. Bayankin

    МақолаIon-surface interactions and analysisThe Physics of Metals and Metallography20120 иқтибос
    ABI

  16. Cascade Injection Photodetector for the 500−650-nm Spectral Range on the Basis of Solid Solutions of A2B6 Compounds

    Ш. А. Мирсагатов, B. N. Zaveryukhin, O. K. Ataboev +1

    МақолаSemiconductor materials and interfacesUkrainian Journal of Physics20130 иқтибос
    ABI

  17. SIMS of silicon bombarded with Sb+ m cluster ions

    С. Н. Морозов, У. Х. Расулев

    МақолаIon-surface interactions and analysisBulletin of the Russian Academy of Sciences Physics20140 иқтибос
    ABI

  18. Utilization of Acoustic Emission in Scratch Test Evaluation

    Jan Tomáštík, Radim Čtvrtlík, Petr Bohac +4

    МақолаMetal and Thin Film MechanicsKey engineering materials20150 иқтибос
    ABI

  19. Experimental research on silicon carbide photoconductive semiconductor switch

    Yanling Sun, Meng Yang, Chaoyang Song +2

    МақолаPulsed Power Technology ApplicationsMicrowave and Optical Technology Letters20150 иқтибос
    ABI

  20. The lateral capacitance of nanometer MNOSFET with a single charge trapped in oxide layer or at SiO2 - SI3N4

    A.E. Atamuratov, U.A. Aminov, Z.A. Atamuratova +3

    МақолаSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics20150 иқтибос
    ABI

  21. Study of doping uniformity of a 200 kV ion implanter by RBS and sheet resistance measurements

    Hui Li, Ze-Song Wang, Shengjun Zhang +5

    МақолаIon-surface interactions and analysisNuclear Science and Techniques20160 иқтибос
    ABI

  22. Effect of Ion Refocusing and Focusing at the Ne and Ar Small Angle Ion Bombardment on the Surface III-V Compound Semiconductors

    Karimov Muxtor Karimberganovich, Sadullaev Shuxrat Ravshanovich, Sobirov Ravshanbek Yuldashbaevich

    МақолаIon-surface interactions and analysisInternational Journal of Trend in Scientific Research and Development20180 иқтибос
    ABI

  23. THE COLLIDING PARTICLES MASS RATIO INFLUENCE ON PECULIARITIES OF LOW-ENERGY ION NEAR-SURFACE IMPLANTATION AT CHANNELING CONDITIONS

    F. F. Umarov, A. M. Rasulov, A.A. Dzhurakhalov

    МақолаIon-surface interactions and analysis«Узбекский физический журнал»20180 иқтибос
    ABI

  24. The amplitude of RTN in nanometer SOI FinFET with different channel shape

    Ahmed Yusupov, A. É. Atamuratov, Azamat E. Abdikarimov +2

    МақолаAdvancements in Semiconductor Devices and Circuit DesignDevelopments of Artificial Intelligence Technologies in Computation and Robotics20200 иқтибос
    ABI

  25. Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +2

    МақолаAdvancements in Semiconductor Devices and Circuit Designe-Journal of Surface Science and Nanotechnology20210 иқтибос
    ABI