F. Fizzotti

1 та иш

INFM-research unit, Torino-University,

1. Study of Ion Induced Damage in 4H-SiC

   Alessandro Lo Giudice, P. Oliveira, F. Fizzotti +6

   МақолаIntegrated Circuits and Semiconductor Failure AnalysisMaterials science forum20050 иқтибос

   ABIABI:AkademIndex/openalex/2005.article.000188