RBS analysis of ions implanted in light substrates exposed to hot plasmas laser-generated at PALS

Ge and Ta ion implantation of silicon and carbon substrates has been obtained at PALS Research Laboratory in Prague by using laser pulses of 400 ps duration, 438 nm wavelength, 1014−16 W/cm2 intensity. Substrates were exposed in vacuum at different distances from the target and at different angles with respect to the normal to the target surface. ‘On line’ measurements of ion energy were obtained with time-of-flight techniques by using an electrostatic deflector as ion energy analyzer. ‘Off line’ measurements of ion energy were obtained by Rutherford backscattering spectrometry (RBS) of 2.25 MeV He2+ beam at CEDAD Laboratory of Lecce University. The RBS spectra have given the depth profiles of the ion-implanted species and the implanted doses as a function of the laser intensity, angular position and target distance. A spectra deconvolution method based on the ion stopping power in the substrate matrix was applied in order to evidence the energy of the implanted ions. Measurements indicate that ions with energy ranging between 100 keV and 10 MeV and dose of the order of 1014−16/cm2 are implanted and that the process of ion implantation occurs mainly in substrates placed at little angles with respect to the normal to the target surface. Only a thin film deposition occurs for substrates placed at large angles with respect to the normal direction. Results indicate that the ion energies measured with the ‘on line’ and the ‘off line’ techniques are in good agreement.

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