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B. N. Zaveryukhin

16 та иш

Physical Engineering Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan

  1. Variation of the reflection coefficient of semiconductors in a wavelength range from 0.2 to 20 μm under the action of ultrasonic waves

    B. N. Zaveryukhin, N. N. Zaveryukhina, Oybek Tursunkulov

    МақолаMaterial Properties and ApplicationsTechnical Physics Letters20025 иқтибос
    ABI

  2. Influence of the back contact on the electrophysical and functional characteristics of thin-film CdTe Schottky barrier detector structures

    Ш. А. Мирсагатов, А.С. Ачилов, B. N. Zaveryukhin +1

    МақолаAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal20124 иқтибос
    ABI

  3. Photoelectric properties of an injection photodetector based on alloys of II–VI compounds

    Ш. А. Мирсагатов, O. K. Ataboev, B. N. Zaveryukhin +1

    МақолаChalcogenide Semiconductor Thin FilmsSemiconductors20143 иқтибос
    ABI

  4. Effect of ultrasonic treatment on the generation characteristics of a semiconductor-glass interface

    С. И. Власов, A. V. Ovsyannikov, B. N. Zaveryukhin

    МақолаEngineering Technology and MethodologiesTechnical Physics Letters20092 иқтибос
    ABI

  5. Acoustostimulated expansion of the short-wavelength sensitivity range of AlGaAs/GaAs Solar cells

    E. B. Zaveryukhina, N. N. Zaveryukhina, L. N. Lezilova +3

    МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters20052 иқтибос
    ABI

  6. Alternating-strain-induced drift of nonequilibrium charge carriers in GaAs photodetectors

    B. N. Zaveryukhin, N. N. Zaveryukhina, Р. А. Муминов +1

    МақолаSemiconductor Quantum Structures and DevicesTechnical Physics Letters20021 иқтибос
    ABI

  7. Development of thermoelectric detectors on the basis of higher manganese silicide (HMS) films

    T. S. Kamilov, A.A. Uzokov, D.K. Kabilov +5

    МақолаAdvanced Thermoelectric Materials and Devices20041 иқтибос
    ABI

  8. Acoustostimulated change in the optical absorption coefficient of gallium arsenide in the 0.81–1.77 μm wavelength range

    N. N. Zaveryukhina, E. B. Zaveryukhina, B. N. Zaveryukhin

    МақолаThermography and Photoacoustic TechniquesTechnical Physics Letters20071 иқтибос
    ABI

  9. Acoustostimulated changes in the density of surface states and their energy spectrum in p-type silicon single crystals

    N. N. Zaveryukhina, E. B. Zaveryukhina, С. И. Власов +1

    МақолаIndustrial Engineering and TechnologiesTechnical Physics Letters20081 иқтибос
    ABI

  10. The synthesis and properties of epitaxial layers of (Si2)1−x(GaAs)x solid solutions on silicon substrates

    Б. Сапаев, А. С. Саидов, B. N. Zaveryukhin

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20041 иқтибос
    ABI

  11. Li-drifted Si detectors for charged particle spectrometry in a wide energy range

    B.B. Bajzakov, B. N. Zaveryukhin, A. Sh. Iskanderov +2

    МақолаParticle Detector Development and PerformancePribory i Tekhnika Ehksperimenta19820 иқтибос
    ABI

  12. Use of the strong exclusion effect in ionizing radiationdetectors based on “pure” semiconductors with non-injecting contacts

    D. A. Aronov, B. N. Zaveryukhin, Р. А. Муминов +2

    МақолаAdvanced Semiconductor Detectors and Materialsphysica status solidi (a)19860 иқтибос
    ABI

  13. Cadmium telluride thin-film detectors of nuclear radiation

    B. N. Zaveryukhin, Ш. А. Мирсагатов, N. N. Zaveryukhina +2

    МақолаAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters20030 иқтибос
    ABI

  14. The new detectors with Schottky barrier on the base of cadmium telluride and their some characteristics

    Ш. А. Мирсагатов, Baiev, B. N. Zaveryukhin +1

    МақолаAdvanced Semiconductor Detectors and Materials20100 иқтибос
    ABI

  15. 10.1007/s11455-008-3019-x

    B. N. Zaveryukhin, N. N. Zaveryukhina, S. I. Vlasov +1

    МақолаHermeneutics and Narrative IdentityCrossRef Listing of Deleted DOIs20100 иқтибос
    ABI

  16. Cascade Injection Photodetector for the 500−650-nm Spectral Range on the Basis of Solid Solutions of A2B6 Compounds

    Ш. А. Мирсагатов, B. N. Zaveryukhin, O. K. Ataboev +1

    МақолаSemiconductor materials and interfacesUkrainian Journal of Physics20130 иқтибос
    ABI