Photoelectric properties of an injection photodetector based on alloys of II–VI compounds
Ш. А. МирсагатовPhysical-Technical Institute, “Physics-Sun” Research and Production Enterprise, Academy of Sciences of Uzbekistan, ul. G. Mavlyanova 2, Tashkent, 100084, UzbekistanO. K. AtaboevKarakalpak State Univeristy, ul. Akademika Ch. Abdirova 1, Nukus, 230113, UzbekistanB. N. ZaveryukhinPhysical-Technical Institute, “Physics-Sun” Research and Production Enterprise, Academy of Sciences of Uzbekistan, ul. G. Mavlyanova 2, Tashkent, 100084, UzbekistanZh. T. NazarovNavoi State Mining Institute, ul. Yuzhnaya 27, Navoi, 706800, Uzbekistan
ABI
Аннотация
A photosensitive structure with high room-temperature integrated sensitivity S int ≈ 700 A/lm (14500 A/W) is fabricated based on alloys of II–VI compounds n-CdS x Te1 − x and p-Zn y Cd1 − y Te. Its photoelectric properties are studied at various illumination levels and bias voltages. It is found that diffusion and drift flows of nonequilibrium carriers are directed oppositely at low illumination levels and forward bias voltages. This effect leads to inversion of the photocurrent sign, which makes it possible to fabricate selective photodetectors with injection properties on its basis.
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