Effect of ultrasonic treatment on the generation characteristics of a semiconductor-glass interface
С. И. ВласовNational University of Uzbekistan, Tashkent, UzbekistanA. V. OvsyannikovNational University of Uzbekistan, Tashkent, UzbekistanB. N. ZaveryukhinNational University of Uzbekistan, Tashkent, Uzbekistan
ABI
Аннотация
It is demonstrated that the temporal variation of the rate of the surface generation of charge carriers at a semiconductor-glass interface can be determined by measuring the kinetics of capacitance relaxation in the semiconductor-glass-metal structure. Ultrasonic treatment of the semiconductor-glass interface decreases the absolute value of the surface generation rate and modifies its temporal dependence.
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