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С. И. Власов

23 та иш

Tashkent State University, Vuzgorodok, Tashkent, 700095, Uzbekistan

  1. Properties of Passivating Coatings Based on Lead Borosilicate Glass

    П. Б. Парчинский, С. И. Власов, U. T. Turgunov

    МақолаGlass properties and applicationsInorganic Materials20026 иқтибос
    ABI

  2. Effect of pressure on the electric properties of passivating coatings based on lead borosilicate glasses

    С. И. Власов, Fayzulla A. Saparov

    МақолаMaterial Science and ThermodynamicsSurface Engineering and Applied Electrochemistry20114 иқтибос
    ABI

  3. Electronic density of states at the interface between silicon and lead borosilicate glass

    С. И. Власов, П. Б. Парчинский, B. A. Olmatov

    МақолаSemiconductor materials and interfacesInorganic Materials20004 иқтибос
    ABI

  4. Study of photoluminescence spectra of GaMnAs produced by low-temperature molecular beam epitaxy

    P. B. Parchinskiy, A. Yu. Bobylev, С. И. Власов +2

    МақолаZnO doping and propertiesSemiconductors20072 иқтибос
    ABI

  5. Effect of ultrasonic treatment on the generation characteristics of a semiconductor-glass interface

    С. И. Власов, A. V. Ovsyannikov, B. N. Zaveryukhin

    МақолаEngineering Technology and MethodologiesTechnical Physics Letters20092 иқтибос
    ABI

  6. Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor

    С. И. Власов

    МақолаAdvanced Materials and Semiconductor TechnologiesSemiconductor Physics Quantum Electronics & Optoelectronics20102 иқтибос
    ABI

  7. The effect of γ-ray radiation on the characteristics of the interface between silicon and lead-borosilicate glass

    П. Б. Парчинский, С. И. Власов, Aslan Nasirov

    МақолаGlass properties and applicationsSemiconductors20041 иқтибос
    ABI

  8. Acoustostimulated changes in the density of surface states and their energy spectrum in p-type silicon single crystals

    N. N. Zaveryukhina, E. B. Zaveryukhina, С. И. Власов +1

    МақолаIndustrial Engineering and TechnologiesTechnical Physics Letters20081 иқтибос
    ABI

  9. Effect of the semiconductor-insulator interface on the characteristics of the metal-insulator-semiconductor structures

    С. И. Власов, Fayzulla A. Saparov, B.Kh. Kuchkarov

    МақолаElectric Power Systems and ControlUzbekiston Fizika Zhurnali20091 иқтибос
    ABI

  10. Nonmonotonous capacitance-voltage characteristics in metal-glass-semiconductor structures

    С. И. Власов, Aslan Nasirov, О. О. Маматкаримов +1

    МақолаSemiconductor materials and devicesSurface Engineering and Applied Electrochemistry20081 иқтибос
    ABI

  11. Effect of heat treatment on the properties of erbium-doped silicon

    С. И. Власов, D. É. Nazyrov, A. A. Iminov +1

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20001 иқтибос
    ABI

  12. Minority-Carrier Generation at the Interface between Silicon and Lead Borosilicate Glass

    П. Б. Парчинский, С. И. Власов

    МақолаSemiconductor materials and interfacesRussian Microelectronics20011 иқтибос
    ABI

  13. On the nature of the mobile charge in passivating coatings based on lead-borosilicate glasses

    С. И. Власов, П. Б. Парчинский, Aslan Nasirov +1

    МақолаSurface Roughness and Optical MeasurementsTechnical Physics19990 иқтибос
    ABI

  14. The effect of ultrasound on the parameters of metal-dielectric-semiconductor structures

    П. Б. Парчинский, С. И. Власов, Р. А. Муминов +2

    МақолаEngineering Technology and MethodologiesTechnical Physics Letters20000 иқтибос
    ABI

  15. Slowly relaxing charge in lead borosilicate glass passive coatings studied by isothermal capacitance relaxation

    П. Б. Парчинский, С. И. Власов, Aslan Nasirov

    МақолаSemiconductor materials and devicesTechnical Physics Letters20010 иқтибос
    ABI

  16. The effect of ultrasonic treatment on the generation characteristics of a Si-SiO2 interface

    П. Б. Парчинский, С. И. Власов, Л. Г. Лигай +1

    МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters20030 иқтибос
    ABI

  17. Properties of silicon doped by gadolinium and samarium during growth

    Muratali Bazarbaev, С. И. Власов, D.E. Nazirov

    МақолаSilicon and Solar Cell Technologies20040 иқтибос
    ABI

  18. Effect of pressure on the properties of a silicon-glass interface

    С. И. Власов, M. A. Ergasheva, T. P. Adylov

    МақолаSemiconductor Quantum Structures and DevicesTechnical Physics Letters20050 иқтибос
    ABI

  19. Effect of ultrasonic treatment on the generation characteristics of irradiated silicon-silicon-dioxide interface

    П. Б. Парчинский, С. И. Власов, Л. Г. Лигай

    МақолаSilicon Nanostructures and PhotoluminescenceSemiconductors20060 иқтибос
    ABI

  20. The rate of surface generation of charge carriers at the semiconductor-glass interface

    С. И. Власов, A. V. Ovsyannikov

    МақолаSurface Roughness and Optical MeasurementsSurface Engineering and Applied Electrochemistry20080 иқтибос
    ABI

  21. To study the interface semiconductor-dielectrics centres effect on the state density

    B. Kh. Qochqorov, M. Ehrgasheva, Н. Р. Рахимов +1

    МақолаSurface and Thin Film Phenomena20100 иқтибос
    ABI

  22. Influence Of Pressure On Creation Macroadenomas Inclusions Of Surface Of Metal-Glass-Semiconductor Structures

    С. И. Власов, О. О. Маматкаримов, A. V. Ovsyannikov +1

    МақолаNanotechnology research and applications20100 иқтибос
    ABI

  23. Studying influence of titanium and hafnium atoms on characteristics of volume and Si-SiO 2 interface of multilayer structures

    С. И. Власов, Sh.S. Daliev

    МақолаAdvanced Materials Characterization TechniquesUzbekiston Fizika Zhurnali20110 иқтибос
    ABI