The effect of ultrasonic treatment on the generation characteristics of a Si-SiO2 interface
П. Б. ПарчинскийNational University of Uzbekistan, Tashkent, UzbekistanС. И. ВласовNational University of Uzbekistan, Tashkent, UzbekistanЛ. Г. ЛигайNational University of Uzbekistan, Tashkent, UzbekistanO. Yu. ShchukinaNational University of Uzbekistan, Tashkent, Uzbekistan
ABI
Аннотация
We have studied the effect of ultrasonic treatment on the generation characteristics of a silicon-silicon dioxide (Si-SiO2) interface obtained by thermal oxidation of the surface of silicon. The ultrasonic treatment leads to a decrease in the surface generation rate and an increase in the generation lifetime of minority charge carriers. These effects are related to a transformation of the defect structure of a transition layer at the Si-SiO2 interface and in the adjacent region of silicon.
Ҳали таржима қилинмаган
Мавзулар
Идентификаторлар
Иқтибослар ва манбалар
0 та иқтибос2 та фойдаланилган манба