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Aslan Nasirov

14 та иш

National University of Uzbekistan, 100176, Tashkent, Uzbekistan

  1. Anisotropy of Negative Magnetoresistance in GaMnAs Epitaxial Layers

    A. S. Gazizulina, Aslan Nasirov, A. A. Nebesniy +2

    МақолаZnO doping and propertiesSemiconductors20213 иқтибос
    ABI

  2. The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

    M. M. Khalilloev, B. O. Jabbarova, Aslan Nasirov

    МақолаAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20192 иқтибос
    ABI

  3. The effect of γ-ray radiation on the characteristics of the interface between silicon and lead-borosilicate glass

    П. Б. Парчинский, С. И. Власов, Aslan Nasirov

    МақолаGlass properties and applicationsSemiconductors20041 иқтибос
    ABI

  4. Surface state density at the semiconductor-glass interface

    Aslan Nasirov

    МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20081 иқтибос
    ABI

  5. Nonmonotonous capacitance-voltage characteristics in metal-glass-semiconductor structures

    С. И. Власов, Aslan Nasirov, О. О. Маматкаримов +1

    МақолаSemiconductor materials and devicesSurface Engineering and Applied Electrochemistry20081 иқтибос
    ABI

  6. On the nature of the mobile charge in passivating coatings based on lead-borosilicate glasses

    С. И. Власов, П. Б. Парчинский, Aslan Nasirov +1

    МақолаSurface Roughness and Optical MeasurementsTechnical Physics19990 иқтибос
    ABI

  7. Slowly relaxing charge in lead borosilicate glass passive coatings studied by isothermal capacitance relaxation

    П. Б. Парчинский, С. И. Власов, Aslan Nasirov

    МақолаSemiconductor materials and devicesTechnical Physics Letters20010 иқтибос
    ABI

  8. Dependence of the surface generation velocity at silicon-(lead borosilicate) glass interface on conditions of nonequilibrium depletion region formation

    P. B. Parchinskiy, Aslan Nasirov, Л. Г. Лигай +2

    МақолаMaterial Science and ThermodynamicsTechnical Physics Letters20110 иқтибос
    ABI

  9. Investigation into the charge-carrier generation processes in MIS structures with lead borosilicate glass-based dielectrics

    П. Б. Парчинский, Л. Г. Лигай, Aslan Nasirov +2

    МақолаGlass properties and applicationsSurface Engineering and Applied Electrochemistry20120 иқтибос
    ABI

  10. Effect of Substrate Temperature on the Physical Properties of ZnхSn1 – хSe Films for Thin-Film Solar Cells

    T.M. Razykov, К. M. Kuchkarov, B. A. Ergashev +4

    МақолаChalcogenide Semiconductor Thin FilmsApplied Solar Energy20190 иқтибос
    ABI

  11. Statistical properties of a periodically modulated radiation in a multimode fibers

    T. Akhmadzhanov, Aslan Nasirov

    МақолаPhotonic and Optical Devices2019 International Conference on Information Science and Communications Technologies (ICISCT)20190 иқтибос
    ABI

  12. Effect of the doping compensation on the photoluminescence spectra of ZnO doped by nitrogen

    P. B. Parchinskiy, A. A. Nebesniy, Aslan Nasirov +4

    МақолаZnO doping and properties20220 иқтибос
    ABI

  13. Anisotropy of Carrier Transport Processes in GaMnAs Grown via Low Temperature Molecular Beam Epitaxy

    A. S. Gazizulina, Aslan Nasirov, P.B. Parchinskiy

    МақолаZnO doping and properties20220 иқтибос
    ABI

  14. Effect of Be Co-Doping on Anisotropy of Magnetoresistance in GaMnAs Epitaxial Layers

    P. B. Parchinskiy, A. S. Gazizulina, Aslan Nasirov

    МақолаZnO doping and propertiesRussian Physics Journal20230 иқтибос
    ABI