B. O. Jabbarova

8 та иш

Urgench State University, Urgench, Uzbekistan

Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries
A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2
ПрепринтAdvancements in Semiconductor Devices and Circuit Design20216 иқтибос
ABI
The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes
A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1
МақолаAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20215 иқтибос
ABI
Linearized KdV equation on a metric graph
Z. A. Sobirov, Maqsad. I. Akhmedov, O.V. Karpova +1
МақолаAdvanced Mathematical Physics ProblemsNanosystems Physics Chemistry Mathematics20153 иқтибос
ABI
The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET
M. M. Khalilloev, B. O. Jabbarova, Aslan Nasirov
МақолаAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20192 иқтибос
ABI
Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET
A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2
МақолаSemiconductor materials and devices20241 иқтибос
ABI
Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET
A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +5
МақолаAdvancements in Semiconductor Devices and Circuit DesignMicro and Nanostructures20240 иқтибос
ABI
Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET
M. M. Khalilloev, B. O. Jabbarova, F. Eshchanov +1
МақолаSemiconductor materials and devicesEast European Journal of Physics20250 иқтибос
ABI
First-Principles Investigation of The Electronic Properties of Monolayer MoS₂ Using DFT-Based QuantumATK Simulations
M. M. Khalilloev, B. O. Jabbarova, Asrorbek Hasanov +2
Мақола2D Materials and ApplicationsEast European Journal of Physics20260 иқтибос
ABI