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East European Journal of Physics

150 та иш

Журнал · ISSN 2312-4334

  1. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

    Jo`shqin Abdullayev, I. B. Sapaev

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202414 иқтибос
    ABI

  2. Effect of the Diffusion of Copper Atoms in Polycrystalline CdTe Films Doped with Pb Atoms

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, S. A. Muzafarova +1

    МақолаAdvanced Semiconductor Detectors and MaterialsEast European Journal of Physics202312 иқтибос
    ABI

  3. Determination of the Dependence of the Oscillation of Transverse Electrical Conductivity and Magnetoresistance on Temperature in Heterostructures Based on Quantum Wells

    У. И. Эркабоев, R. G. Rakhimov

    МақолаSemiconductor Quantum Structures and DevicesEast European Journal of Physics202311 иқтибос
    ABI

  4. Structural Properties of Silicon Doped Rare Earth Elements Ytterbium

    Khodjakbar S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +1

    МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics202411 иқтибос
    ABI

  5. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

    Jo`shqin Abdullayev, I. B. Sapaev

    МақолаSemiconductor materials and interfacesEast European Journal of Physics202410 иқтибос
    ABI

  6. Investigation of Defect Formation in Silicon Doped with Silver and Gadolinium Impurities by Raman Scattering Spectroscopy

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Elmira M. Naurzalieva +1

    МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20238 иқтибос
    ABI

  7. Structure Determination and Defect Analysis n-Si<Lu>, p-Si<Lu> Raman Spectrometer Methods

    Khodjakbar S. Daliev, Sharifa B. Utamuradova, Zavkiddin E. Bahronkulov +2

    МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20238 иқтибос
    ABI

  8. Investigation of the Magnetic Properties of Silicon Doped with Rare-Earth Elements

    Khodjakbar S. Daliev, Zavkiddin E. Bahronkulov, Jonibek J. Hamdamov

    МақолаMagnetic Field Sensors TechniquesEast European Journal of Physics20238 иқтибос
    ABI

  9. X-Ray Structural Investigations Of n-Si<Pt> Irradiated with Protons

    Sharifa B. Utamuradova, А. В. Станчик, Dilmurod A. Rakhmanov

    МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20238 иқтибос
    ABI

  10. Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics

    Н. Ф. Зикриллаев, G. A. Kushiev, Sergey V. Koveshnikov +3

    МақолаSemiconductor materials and interfacesEast European Journal of Physics20238 иқтибос
    ABI

  11. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

    N. A. Turgunov, Elmurod Kh. Berkinov, R.M. Turmanova

    МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20238 иқтибос
    ABI

  12. Structure and Physico-Mechanical Properties of Polyelectrolyte Complexes Based on Sodium Carboxymethylcellulose Polysaccharide and Polyacrylamide

    Sabitjan Ya. Inagamov, Ummatjon A. Asrorov, Erkin B. Xujanov

    МақолаHydrogels: synthesis, properties, applicationsEast European Journal of Physics20237 иқтибос
    ABI

  13. A Surface Study of Si Doped Simultaneously with Ga and Sb

    X.M. Iliyev, Sobir B. Isamov, B. O. Isakov +2

    МақолаSemiconductor Quantum Structures and DevicesEast European Journal of Physics20237 иқтибос
    ABI

  14. Effect of γ-Irradiation on Structure and Electrophysical Properties of S-Doped ZnO Films

    С. З. Зайнабидинов, Akramjon Y. Boboev, Nuritdin Y. Yunusaliyev

    МақолаZnO doping and propertiesEast European Journal of Physics20247 иқтибос
    ABI

  15. Single and Multiphoton Optical Transitions in Atomically Thin Layers of Transition Metal Dichalcogenides

    Rustam Yavkachovich Rasulov, Voxob Rustamovich Rasulov, Kamolakhon K. Urinova +2

    Мақола2D Materials and ApplicationsEast European Journal of Physics20247 иқтибос
    ABI

  16. Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 иқтибос
    ABI

  17. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

    Jo`shqin Abdullayev

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 иқтибос
    ABI

  18. Some Properties of Semiconductor-Ferroelectric Structures

    Zakirjan Toxirovich Аzamatov, Sharifa B. Utamuradova, Murodjon A. Yuldoshev +1

    МақолаZnO doping and propertiesEast European Journal of Physics20237 иқтибос
    ABI

  19. Investigations of Nonlinear Optical Properties of Lithium Niobate Crystals

    Sharifa B. Utamuradova, Zakirjan T. Azamatov, Murodjon A. Yuldoshev +2

    МақолаPhotorefractive and Nonlinear OpticsEast European Journal of Physics20236 иқтибос
    ABI

  20. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

    Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

    МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20236 иқтибос
    ABI

  21. Modeling the Temperature Dependence of Shubnikov-De Haas Oscillations in Light-Induced Nanostructured Semiconductors

    У. И. Эркабоев, R. G. Rakhimov, J. I. Mirzaev +2

    МақолаQuantum and electron transport phenomenaEast European Journal of Physics20245 иқтибос
    ABI

  22. Nanocrystalline ZnO Films on Various Substrates: A Study on Their Structural, Optical, and Electrical Characteristics

    Numonjon Sultanov, Zokirjon Mirzajonov, Fakhriddin T. Yusupov +1

    МақолаZnO doping and propertiesEast European Journal of Physics20245 иқтибос
    ABI

  23. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 иқтибос
    ABI

  24. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 иқтибос
    ABI

  25. Research of the Impact of Silicon Doping with Holmium on its Structure and Properties Using Raman Scattering Spectroscopy Methods

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Alisher Khaitbaev +3

    МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20245 иқтибос
    ABI