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В. Б. Оджаев

5 та иш

Belarusian State University, Minsk, Republic of Belarus

  1. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

    Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

    МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20236 иқтибос
    ABI

  2. The Effect of Gamma Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Solar Cells

    Z. T. Kenzhaev, Х. М. Илиев, В. Б. Оджаев +6

    МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20241 иқтибос
    ABI

  3. Improving the efficiency of an industrial silicon solar cell by doping with nickel

    M. K. Bakhadirkhanov, Z. T. Kenzhaev, B. K. Ismaylov +3

    МақолаChalcogenide Semiconductor Thin FilmsJournal of the Belarusian State University Physics20210 иқтибос
    ABI

  4. Influence of Nickel Impurity on the Operating Parameters of a Silicon Solar Cell

    Z. T. Kenzhaev, Н. Ф. Зикриллаев, В. Б. Оджаев +4

    МақолаSilicon and Solar Cell TechnologiesRussian Microelectronics20240 иқтибос
    ABI

  5. The Influence of γ-Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Grown by the Czochralski Method

    Х. М. Илиев, К. А. Исмайлов, E. Zh. Kosbergenov +6

    МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20250 иқтибос
    ABI