Асосий контентга ўтиш
AkademIndex

Маҳсулотлар

Ишлаб чиқувчилар учун

AkademBaseЭкотизим учун очиқ API

К. А. Исмайлов

17 та иш

Karakalpak State University, 230112, Nukus, Uzbekistan

  1. Radiation Stability of Nickel Doped Solar Cells

    К. А. Исмайлов, Z. T. Kenzhaev, S. Koveshnikov +2

    МақолаSilicon and Solar Cell TechnologiesPhysics of the Solid State20229 иқтибос
    ABI

  2. Clusters of impurity nickel atoms and their migration in the crystal lattice of silicon

    B. K. Ismaylov, N. F. Zikrillayev, К. А. Исмайлов +1

    МақолаMaterial Science and ThermodynamicsPhysical Sciences and Technology20237 иқтибос
    ABI

  3. Interaction between multiply charged manganese nanoclusters and sulfur atoms in silicon

    Z.M. Saparniyazova, М. К. Бахадырханов, О. Э. Саттаров +4

    МақолаSemiconductor materials and interfacesInorganic Materials20125 иқтибос
    ABI

  4. Interaction of radiation defects with nickel atom clusters in silicon

    Х. М. Илиев, Z.M. Saparniyazova, К. А. Исмайлов +2

    МақолаGraphite, nuclear technology, radiation studiesSurface Engineering and Applied Electrochemistry20115 иқтибос
    ABI

  5. Enhancing the Efficiency of Silicon Solar Cells through Nickel Doping

    Z. T. Kenzhaev, Н. Ф. Зикриллаев, K. S. Ayupov +3

    МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20234 иқтибос
    ABI

  6. Current State of the Labor Market and Employment Problems

    К. А. Исмайлов, Baijanov, K. Bekbosinov

    МақолаLanguage Acquisition and EducationBulletin of Science and Practice20211 иқтибос
    ABI

  7. Interaction of multiply charged manganese nanoclusters with selenium and tellurium atoms in silicon

    М. К. Бахадырханов, Z.M. Saparniyazova, Х. М. Илиев +1

    МақолаSemiconductor Quantum Structures and DevicesInorganic Materials20151 иқтибос
    ABI

  8. Comparative study of photocells based on silicon doped with nickel by various methods

    К. А. Исмайлов, Н. Ф. Зикриллаев, S. Koveshnikov +1

    МақолаSilicon and Solar Cell TechnologiesФизика и техника полупроводников20221 иқтибос
    ABI

  9. Formation of nanoclusters of gadolinium atoms in silicon

    Х. М. Илиев, Z.M. Saparniyazova, К. А. Исмайлов +1

    МақолаSilicon Nanostructures and PhotoluminescenceSurface Engineering and Applied Electrochemistry20110 иқтибос
    ABI

  10. Dependence of the surface generation velocity at silicon-(lead borosilicate) glass interface on conditions of nonequilibrium depletion region formation

    P. B. Parchinskiy, Aslan Nasirov, Л. Г. Лигай +2

    МақолаMaterial Science and ThermodynamicsTechnical Physics Letters20110 иқтибос
    ABI

  11. Investigation into the charge-carrier generation processes in MIS structures with lead borosilicate glass-based dielectrics

    П. Б. Парчинский, Л. Г. Лигай, Aslan Nasirov +2

    МақолаGlass properties and applicationsSurface Engineering and Applied Electrochemistry20120 иқтибос
    ABI

  12. Methods of estimations of the band gap for kesterite Cu2ZnSnS(Se)4

    Damir Mamedov, Komiljon Yakubov, R.B. Bazarbaev +3

    МақолаChalcogenide Semiconductor Thin FilmsMaterials Today Proceedings20200 иқтибос
    ABI

  13. Сарлавҳасиз

    М. К. Бахадырханов, К. А. Исмайлов, E Zh +30

    БошқаSemiconductor Physics Quantum Electronics & Optoelectronics20220 иқтибос
    ABI

  14. Influence of Nickel Impurity on the Operating Parameters of a Silicon Solar Cell

    Z. T. Kenzhaev, Н. Ф. Зикриллаев, В. Б. Оджаев +4

    МақолаSilicon and Solar Cell TechnologiesRussian Microelectronics20240 иқтибос
    ABI

  15. Influence of particles formed resulting from wear of automobile brake mechanisms on human health

    Kamola Karimova, К. А. Исмайлов, Abdulaziz Shermukhamedov +1

    МақолаBrake Systems and Friction AnalysisE3S Web of Conferences20240 иқтибос
    ABI

  16. The Influence of γ-Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Grown by the Czochralski Method

    Х. М. Илиев, К. А. Исмайлов, E. Zh. Kosbergenov +6

    МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20250 иқтибос
    ABI

  17. Optical and electrophysical properties of GaAs(O):Cr

    M.Yu. Tashmetov, Kh.N. Djangabaev, A.B. Abdaminov +4

    МақолаGa2O3 and related materials«Узбекский физический журнал»20260 иқтибос
    ABI