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О. Э. Саттаров

11 та иш

Tashkent State Technical University, ul. Universitetskaya 2, Tashkent, 100095, Uzbekistan

  1. Photoconductivity of silicon with multicharged clusters of manganese atoms [Mn]4

    М. К. Бахадырханов, Г. Х. Мавлонов, С. Б. Исамов +4

    МақолаInorganic Fluorides and Related CompoundsSurface Engineering and Applied Electrochemistry201010 иқтибос
    ABI

  2. Specific features of magnetoresistance in overcompensated manganese-doped silicon

    M. K. Bakhadirkhanov, G. H. Mavlonov, X. M. Iliev +3

    МақолаMagnetic Properties and ApplicationsSemiconductors20147 иқтибос
    ABI

  3. Interaction between multiply charged manganese nanoclusters and sulfur atoms in silicon

    Z.M. Saparniyazova, М. К. Бахадырханов, О. Э. Саттаров +4

    МақолаSemiconductor materials and interfacesInorganic Materials20125 иқтибос
    ABI

  4. Interaction of radiation defects with nickel atom clusters in silicon

    Х. М. Илиев, Z.M. Saparniyazova, К. А. Исмайлов +2

    МақолаGraphite, nuclear technology, radiation studiesSurface Engineering and Applied Electrochemistry20115 иқтибос
    ABI

  5. Stimulation of negative magnetoresistance by an electric field and light in silicon doped with boron and manganese

    М. К. Бахадырханов, О. Э. Саттаров, Х. М. Илиев +2

    МақолаSemiconductor materials and interfacesSemiconductors20050 иқтибос
    ABI

  6. About nanoclusters nature of manganese atoms in silicon

    Г. Х. Мавлонов, С. Б. Исамов, Z.M. Saparniyazova +3

    МақолаLaser-Ablation Synthesis of Nanoparticles20100 иқтибос
    ABI

  7. The γ radiation effect on silicon properties with nanoclusters of manganese atoms

    K.A. Ismaylov, Х. М. Илиев, Z.M. Saparniyazova +2

    МақолаCrystallography and Radiation Phenomena20100 иқтибос
    ABI

  8. The possibility of multistage structures formation on the base of silicon with nickel atoms clusters

    Х. М. Илиев, Z.M. Saparniyazova, О. Э. Саттаров +2

    МақолаMaterial Properties and Applications20110 иқтибос
    ABI

  9. Thermodynamic conditions of formation of nickel atom clusters in the silicon lattice

    Б. А. Абдурахманов, Х. М. Илиев, Z.M. Saparniyazova +1

    МақолаAdvanced Materials Characterization TechniquesUzbekiston Fizika Zhurnali20110 иқтибос
    ABI

  10. Formation of Binary Compounds of Impurity Atoms of Sulfur and Zinc in Silicon

    M. K. Khakkulov, A. Sh. Mavlyanov, О. Э. Саттаров +2

    МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20240 иқтибос
    ABI

  11. Mathematical modeling based on astronomical and physical-geometric principles for optimizing the efficiency of solar panels

    Dostonjon Yakubov, О. Э. Саттаров, Б. А. Абдурахманов +2

    МақолаSolar Radiation and Photovoltaics20250 иқтибос
    ABI