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Г. Х. Мавлонов

17 та иш

Tashkent State Technical University, Universitetskaya ul. 2, Tashkent, 100095, Uzbekistan

  1. Transport properties of silicon doped with manganese via low-temperature diffusion

    М. К. Бахадырханов, Г. Х. Мавлонов, С. Б. Исамов +4

    МақолаSilicon and Solar Cell TechnologiesInorganic Materials201124 иқтибос
    ABI

  2. Silicon with Magnetic Nanoclusters of Manganese Atoms as a New Ferromagnetic Material

    М. К. Бахадырханов, Х. М. Илиев, Г. Х. Мавлонов +3

    МақолаSemiconductor materials and interfacesTechnical Physics201910 иқтибос
    ABI

  3. Photoconductivity of silicon with multicharged clusters of manganese atoms [Mn]4

    М. К. Бахадырханов, Г. Х. Мавлонов, С. Б. Исамов +4

    МақолаInorganic Fluorides and Related CompoundsSurface Engineering and Applied Electrochemistry201010 иқтибос
    ABI

  4. Formation of Complexes of Phosphorus and Boron Impurity Atoms in Silicon

    М. К. Бахадырханов, Z. T. Kenzhaev, S. Koveshnikov +2

    МақолаSilicon and Solar Cell TechnologiesInorganic Materials20228 иқтибос
    ABI

  5. Effect of electric field, illumination, and temperature on negative magnetoresistance of low-temperature-diffusion-doped silicon

    М. К. Бахадырханов, K. S. Ayupov, Х. М. Илиев +2

    МақолаMagnetic properties of thin filmsTechnical Physics Letters20108 иқтибос
    ABI

  6. Functional Capabilities of Silicon with Nanoclusters of Manganese Atoms

    M. K. Bakhadirkhanov, С. Б. Исамов, Н. Ф. Зикриллаев +4

    МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20208 иқтибос
    ABI

  7. The Physical mechanisms of gettering properties of nickel clusters in silicon solar cells

    Zoir Kenjayev, Khalmurat Iliev, Kanatbay A. Ismailov +4

    МақолаSilicon and Solar Cell TechnologiesPhysical Sciences and Technology20242 иқтибос
    ABI

  8. Control of the magnetic properties of silicon with manganese atom nanoclusters

    М. К. Бахадырханов, Г. Х. Мавлонов, Х. М. Илиев

    МақолаMagnetic Field Sensors TechniquesTechnical Physics20142 иқтибос
    ABI

  9. Magnetic Properties of Silicon with Paramagnetic Impurity Atoms

    N. F. Zikrillayev, Г. Х. Мавлонов, Levent Trabzon +4

    МақолаSemiconductor materials and interfacesEast European Journal of Physics20231 иқтибос
    ABI

  10. Negative magnetoresistance in silicon doped with manganese

    Н. Ф. Зикриллаев, Х. М. Илиев, Г. Х. Мавлонов +2

    МақолаSemiconductor materials and interfacesE3S Web of Conferences20231 иқтибос
    ABI

  11. The Effect of Gamma Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Solar Cells

    Z. T. Kenzhaev, Х. М. Илиев, В. Б. Оджаев +6

    МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20241 иқтибос
    ABI

  12. About nanoclusters nature of manganese atoms in silicon

    Г. Х. Мавлонов, С. Б. Исамов, Z.M. Saparniyazova +3

    МақолаLaser-Ablation Synthesis of Nanoparticles20100 иқтибос
    ABI

  13. The anomalous Hall effect in silicon with nanoclusters of manganese atoms

    Н. Ф. Зикриллаев, K. S. Ayupov, Г. Х. Мавлонов +1

    МақолаMagnetic Field Sensors Techniques20100 иқтибос
    ABI

  14. The Effect of Negative Magnetoresistance in Silicon to Create Multifunctional Sensors

    М. К. Бахадырханов, Х. М. Илиев, Г. Х. Мавлонов +2

    МақолаMagnetic Field Sensors TechniquesTechnical Physics Letters20220 иқтибос
    ABI

  15. <i>In-situ</i> sulfur anion doping for defect passivation and stability enhancement in ZnSnO thin-film transistors

    Cheng Lian, Meng-Yang Liu, Chuanxin Huang +4

    МақолаThin-Film Transistor TechnologiesJournal of Physics D Applied Physics20250 иқтибос
    ABI

  16. Ordered fiber ionic pathways for wide-frequency regulation in electrolyte-gated transistors for bio-signal perception

    Jun Li, Jerry J. Wu, Cheng Lian +5

    МақолаAnalytical Chemistry and SensorsJournal of Materials Chemistry C20250 иқтибос
    ABI

  17. Ferromagnetic Properties of Silicon Doped Manganese Atoms

    Н. Ф. Зикриллаев, S. Koveshnikov, Levent Trabzon +4

    МақолаZnO doping and propertiesSurface Engineering and Applied Electrochemistry20250 иқтибос
    ABI