The Effect of Negative Magnetoresistance in Silicon to Create Multifunctional Sensors
М. К. БахадырхановTashkent State Technical University, 100095, Tashkent, UzbekistanХ. М. ИлиевTashkent State Technical University, 100095, Tashkent, UzbekistanГ. Х. МавлоновTashkent State Technical University, 100095, Tashkent, UzbekistanSh. N. IbodullaevTashkent State Technical University, 100095, Tashkent, UzbekistanС. А. ТачилинTashkent State Technical University, 100095, Tashkent, Uzbekistan
ABI
Аннотация
The negative magnetoresistance in silicon containing nanoclusters of manganese atoms is highly sensitive to various external effects. We determined the regularities of the change in the negative magnetoresistance in silicon containing nanoclusters of manganese atoms depending on temperature, illumination, and electric and magnetic fields. A new class of multifunctional sensors of physical quantities can be developed based on a single silicon crystal containing nanoclusters of manganese atoms.
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