Specific features of magnetoresistance in overcompensated manganese-doped silicon
M. K. BakhadirkhanovTashkent State Technical University, Tashkent, 100095, UzbekistanG. H. MavlonovTashkent State Technical University, Tashkent, 100095, UzbekistanX. M. IlievTashkent State Technical University, Tashkent, 100095, UzbekistanK. S. AyupovTashkent State Technical University, Tashkent, 100095, UzbekistanО. Э. СаттаровTashkent State Technical University, Tashkent, 100095, UzbekistanC. A. TachilinTashkent State Technical University, Tashkent, 100095, Uzbekistan
ABI
Аннотация
It is shown experimentally that a rather high negative magnetoresistance in silicon is observed not only in compensated p-(Si:B):Mn, but also in overcompensated n-(Si:B):Mn with a Fermi level of F = E C − 0.35 eV ÷ E C − 0.55 eV. The magnitude and the temperature range of the negative magnetoresistance in materials of this kind are determined by the position of the Fermi level.
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