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Иш: Specific features of magnetoresistance in overcompensated manganese-doped silicon

Transport properties of silicon doped with manganese via low-temperature diffusion
М. К. Бахадырханов, Г. Х. Мавлонов, С. Б. Исамов +4
МақолаSilicon and Solar Cell TechnologiesInorganic Materials201124 иқтибос
ABI
Electron Paramagnetic Resonance of the Mn Cluster in Silicon
J. Kreissl, W. Gehlhoff
Мақола198819 иқтибос
ABI
Spin resonance of deep level impurities in germanium and silicon
Günther Ludwig, H. H. Woodbury, R. O. Carlson
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ABI
Negative magnetoresistance in silicon with manganese-atom complexes [Mn]4
M. K. Bakhadirkhanov, K. S. Ayupov, G. H. Mavlyanov +1
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ABI
Effect of electric field, illumination, and temperature on negative magnetoresistance of low-temperature-diffusion-doped silicon
М. К. Бахадырханов, K. S. Ayupov, Х. М. Илиев +2
МақолаMagnetic properties of thin filmsTechnical Physics Letters20108 иқтибос
ABI
Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb
T. I. Voronina, T. S. Lagunova, M. P. Mikhaĭlova +3
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ABI
Magnetic field sensor based on compensated silicon
М. К. Бахадырханов, Х. М. Илиев, K. S. Ayupov +1
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ABI
Kinetic theory of negative magnetoresistance as an alternative to weak localization in semiconductors
V. É. Kaminskii
Мақола20022 иқтибос
ABI
The magnetoresistance of compensated Ge:As at microwave frequencies in the vicinity of the metal-insulator phase transition
A. I. Veı̆nger, A. G. Zabrodskiĭ, T. V. Tisnek
Мақола20002 иқтибос
ABI