R.M. Turmanova

4 та иш

Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan

1. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

   N. A. Turgunov, Elmurod Kh. Berkinov, R.M. Turmanova

   МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20238 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.279528

2. INFLUENCE OF IMPURITY NI AND CU ATOMS ON THE ELECTROPHYSICAL PROPERTIES OF SI

   N. A. Turgunov, E.Kh. Berkinov, R.M. Turmanova

   МақолаSilicon and Solar Cell TechnologiesAmerican Journal Of Applied Science And Technology20231 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.585531

3. Formation of Impurity Accumulations in Silicon Doped with Nickel and Copper

   S.Z. Zainabidinov, Sh. Akbarov, N. A. Turgunov +2

   МақолаSilicon and Solar Cell TechnologiesE3S Web of Conferences20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.005652

4. Effect of Impurity Clusters on Optical Properties of Nickel and Copper Doped Single-Crystal Silicon

   S. Z. Zainabidinov, N.A. Turgunov, Akramjon Y. Boboev +6

   МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20260 иқтибос

   ABIABI:AkademIndex/openalex/2026.article.011338