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East European Journal of Physics

150 та иш

Журнал · ISSN 2312-4334

  1. Influence of Implantation of Active Metal Ions on the Composition, Emission and Optical Properties of MgO Films

    Maxsuna Yusupjonova, Д. А. Ташмухамедова, Б. Е. Умирзаков +3

    МақолаZnO doping and propertiesEast European Journal of Physics20250 иқтибос
    ABI

  2. Impact of Resistivity on Electrical Characteristics of Al-Doped ZnO/p Si Heterostructures

    Fakhriddin T. Yusupov, Mekhriddin F. Akhmadjonov, Dadakhon Sh. Khidirov +2

    МақолаZnO doping and propertiesEast European Journal of Physics20250 иқтибос
    ABI

  3. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

    A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

    МақолаSemiconductor materials and devicesEast European Journal of Physics20250 иқтибос
    ABI

  4. Spectral and Temperature Dynamics of Photon Absorption in Monatomic Transition Metal Dichalcogenides

    Rustam Yavkachovich Rasulov, Voxob Rustamovich Rasulov, Mardonbek Kh. Nasirov +2

    Мақола2D Materials and ApplicationsEast European Journal of Physics20250 иқтибос
    ABI

  5. On the Theory of the Intraband Mechanism of Single-Photon Absorption in Semiconductors, Taking into Account the Effect of Coherent Saturation

    Rustam Yavkachovich Rasulov, Voxob Rustamovich Rasulov, Forrukh U. Kasimov +2

    МақолаSemiconductor Quantum Structures and DevicesEast European Journal of Physics20250 иқтибос
    ABI

  6. Statical Currents of p-Si–n-Si1-δSnδ–n+-Si1-δSnδ (0≤δ≤0.04)-Structures with Tin Quantum Dots

    Khurshidjon M. Madaminov, Avazbek Sh. Ikromov, Azizbek A. Abdurakhmonov

    МақолаSemiconductor materials and interfacesEast European Journal of Physics20250 иқтибос
    ABI

  7. On the Theory of Two-Photon Intersubband Absorption and Linear-Circular Dichroism in Semiconductors of the A3B5 Type

    Rustam Yavkachovich Rasulov, Voxob Rustamovich Rasulov, Forrukh U. Kasimov +3

    МақолаNonlinear Optical Materials StudiesEast European Journal of Physics20250 иқтибос
    ABI

  8. Theoretical Analysis of Interband Single-Photon Light Absorption in Semiconductors: Effects of Valence-Conduction Band Mixing and Temperature-Dependent Bandgap

    Rustam Yavkachovich Rasulov, Voxob Rustamovich Rasulov, Nurillo Ubaydullo ogli Kodirov +2

    МақолаSemiconductor Quantum Structures and DevicesEast European Journal of Physics20250 иқтибос
    ABI

  9. Studies of Implantation of O+ Ions into SiO2(001) Films at the Small-Angle Ion Bombardment

    Uchkun Kutliev, Atabek S. Ashirov, Gulmira X. Allayarova +1

    МақолаIon-surface interactions and analysisEast European Journal of Physics20250 иқтибос
    ABI

  10. Simulation of Radiation-Induced Structural and Optical Modifications in ZnO:S/SI Thin Film Structures

    Akramjon Y. Boboev, Khushroy A. Makhmudov, Nuritdin Y. Yunusaliyev +3

    МақолаAdvanced Semiconductor Detectors and MaterialsEast European Journal of Physics20250 иқтибос
    ABI

  11. Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET

    M. M. Khalilloev, B. O. Jabbarova, F. Eshchanov +1

    МақолаSemiconductor materials and devicesEast European Journal of Physics20250 иқтибос
    ABI

  12. On the Theory of Interband Two-Photon Absorption of Light in Semiconductors. Accounting Admixtures to the States of the Conduction Band and Valence States, the Rabi Effect

    Rustam Yavkachovich Rasulov, Voxob Rustamovich Rasulov, Forrukh U. Kasimov +2

    МақолаNonlinear Optical Materials StudiesEast European Journal of Physics20250 иқтибос
    ABI

  13. Temperature and Infrared Quenching of Equilibrium Conductivity in CdSexS1-x Film

    Valijon Tulqinovich Mirzaev, Bozorboy J. Akhmadaliyev, Iftikhorjon I. Yulchiev +2

    МақолаChalcogenide Semiconductor Thin FilmsEast European Journal of Physics20250 иқтибос
    ABI

  14. Analysis of Temperature-Dependent Surface Properties in the Ni/SiO2/Si System During Electron Beam Deposition

    А.А. Рахимов, I. Kh. Khudaykulov, A. A. Ismatov +1

    МақолаSemiconductor materials and devicesEast European Journal of Physics20250 иқтибос
    ABI

  15. Effect of Dysprosium Atoms Introduced During the Growth Phase on the Formation of Radiation Defects in Silicon Crystals

    Kh.S. Daliev, Sharifa B. Utamuradova, Shakhrukh Kh. Daliev +2

    МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 иқтибос
    ABI

  16. Effective Charge of Mn and Ni Impurity Atoms in Silicon Under the Influence of An External Electric Field

    B. O. Isakov, Xalmurat M. Iliyev, Zafar B. Khudoynazarov +1

    МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 иқтибос
    ABI

  17. Investigation of the Influence of Nickel on the Behavior of Thermal Donors in Silicon

    B. K. Ismaylov, N. F. Zikrillayev, Kanatbay A. Ismailov +2

    МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 иқтибос
    ABI

  18. Temperature Response Curve of Silicon Diode Temperature Sensors

    Damir Istamov, O. A. Abdulkhaev, Shukurullo M. Kuliyev +3

    МақолаAdvanced MEMS and NEMS TechnologiesEast European Journal of Physics20250 иқтибос
    ABI

  19. Synthesis of CdTe Quantum Dots Via the Molecular Precursor Method and Investigation of Their Optical Properties

    Karimberdi Onarkulov, Adkhamjon I. Zokirov

    МақолаQuantum Dots Synthesis And PropertiesEast European Journal of Physics20250 иқтибос
    ABI

  20. Simulation of Tunnel Diode I–V Characteristics with Photocurrent and Phonon-Assisted Processes

    М. Г. Дадамирзаев, Munirakhon K. Uktamova, Shirin Rakhmanova +1

    МақолаSemiconductor Quantum Structures and DevicesEast European Journal of Physics20250 иқтибос
    ABI

  21. Polarization Effects in Si-n-p Radiation Receivers

    Abdumalik G. Gaibov, Kudbiddin I. Vakhabov, Marguba S. Mirkomilova +1

    МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 иқтибос
    ABI

  22. The Impact of Various Lighting Conditions on the Photosensitive Properties of Si<B,S> and Si<B,Rh> Structures

    Akramjon Y. Boboev, Shakhriyor Kh. Yulchiev, Ziyodjon M. Ibrokhimov +1

    МақолаAdvanced Energy Technologies and Civil Engineering InnovationsEast European Journal of Physics20250 иқтибос
    ABI

  23. Calculated Forbidden Bandgap of Si₃MnS Phase in Supercell (1Х1Х3) and Experimentally Determined Forbidden Bandgap of Si<MnS>

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, A.Sh. Mavlyanov +1

    МақолаSemiconductor materials and interfacesEast European Journal of Physics20250 иқтибос
    ABI

  24. Morphology and Electrical Properties of ITO Films Obtained on Silicon Substrates by CVD Method

    А. С. Саидов, Sh.N. Usmonov, M. U. Hajiev +9

    МақолаZnO doping and propertiesEast European Journal of Physics20250 иқтибос
    ABI

  25. Physical Principles of Photocurrent Generation in a Silicon-Based Photodiode Structure with a Schottky Barrier

    F. A. Giyasova, Akhmad Z. Rakhmatov, Khayot Bakhronov +4

    МақолаSemiconductor materials and interfacesEast European Journal of Physics20250 иқтибос
    ABI