Akhmad Z. Rakhmatov

1 та иш

JSC Photon, Tashkent, Uzbekistan

1. Physical Principles of Photocurrent Generation in a Silicon-Based Photodiode Structure with a Schottky Barrier

   F. A. Giyasova, Akhmad Z. Rakhmatov, Khayot Bakhronov +4

   МақолаSemiconductor materials and interfacesEast European Journal of Physics20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.015850