Zafar B. Khudoynazarov

3 та иш

Tashkent State Technical University named after Islam Karimov, 100095, Tashkent, Uzbekistan

1. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

   Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

   МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20242 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.002753

2. Electrodifusion of Manganese Atoms in Silicon

   Xalmurat M. Iliyev, Zafar B. Khudoynazarov, B. O. Isakov +2

   МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20241 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.003062

3. Effective Charge of Mn and Ni Impurity Atoms in Silicon Under the Influence of An External Electric Field

   B. O. Isakov, Xalmurat M. Iliyev, Zafar B. Khudoynazarov +1

   МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.009031