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M. U. Hajiev

8 та иш

Physical-Technical Institute Physics of the Sun, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan

  1. Growth of transparent electrical conducting films of indium and tin oxides by chemical vapor deposition

    I. G. Atabaev, M. U. Hajiev, V. A. Pak +2

    МақолаTransition Metal Oxide NanomaterialsApplied Solar Energy20164 иқтибос
    ABI

  2. Dependence of the divacancy concentration on the germanium content in Si1 − x Ge x alloys under irradiation by fast and slow neutrons

    М. С. Саидов, S. L. Lutpullaev, А. Yusupov +5

    МақолаSilicon and Solar Cell TechnologiesPhysics of the Solid State20071 иқтибос
    ABI

  3. Spectral Dependence of Optical Absorption of 4<i>H</i>-SiC Doped with Boron and Aluminum

    I. G. Atabaev, Kh. N. Juraev, M. U. Hajiev

    МақолаSilicon Carbide Semiconductor TechnologiesJournal of Spectroscopy20181 иқтибос
    ABI

  4. Current Transport Mechanisms and Electrophysical Characteristics of the 4H-SiC p-n Junctions Formed by Aluminum Diffusion

    Kh. N. Juraev, M. U. Hajiev, А. Кутлимратов +2

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials Science20241 иқтибос
    ABI

  5. Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers

    I. G. Atabaev, N. A. Matchanov, M. U. Hajiev +2

    МақолаSemiconductor materials and devicesSemiconductors20100 иқтибос
    ABI

  6. Effect of surface chemical treatments on Ti-p-Si1 − x Gex and Ni-p-Si1 − x Ge x contact properties

    I. G. Atabaev, M. U. Hajiev, N. A. Matchanov +2

    МақолаSemiconductor materials and interfacesSemiconductors20100 иқтибос
    ABI

  7. Morphology and Electrical Properties of ITO Films Obtained on Silicon Substrates by CVD Method

    А. С. Саидов, Sh.N. Usmonov, M. U. Hajiev +9

    МақолаZnO doping and propertiesEast European Journal of Physics20250 иқтибос
    ABI

  8. Temperature-dependent dark I–V transport and barrier inhomogeneity in VTE-grown CdTe/Si heterojunction

    I.B. Sapaev, S.O. Sadullaev, Kh. N. Juraev +4

    МақолаSemiconductor materials and interfacesResults in Physics20260 иқтибос
    ABI