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V. A. Pak

4 та иш

Physical Technical Institute of Uzbek Academy of Sciences, Tashkent, Uzbekistan;

  1. Influence of Defects on Low Temperature Diffusion of Boron in SiC

    I. G. Atabaev, Tojiddin M. Saliev, Dilmurad SAIDOV +5

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20114 иқтибос
    ABI

  2. Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al

    I. G. Atabaev, Kh. N. Juraev, V. A. Pak

    МақолаSilicon Carbide Semiconductor TechnologiesAdvances in Condensed Matter Physics20174 иқтибос
    ABI

  3. Growth of transparent electrical conducting films of indium and tin oxides by chemical vapor deposition

    I. G. Atabaev, M. U. Hajiev, V. A. Pak +2

    МақолаTransition Metal Oxide NanomaterialsApplied Solar Energy20164 иқтибос
    ABI

  4. Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers

    I. G. Atabaev, N. A. Matchanov, M. U. Hajiev +2

    МақолаSemiconductor materials and devicesSemiconductors20100 иқтибос
    ABI