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И. Н. Каримов

5 та иш

Physics Department, Tashkent State University, Vuzgorodok, Tashkent, 700095, Uzbekistan

  1. Effect of high hydrostatic pressure on the electrophysical properties of doped silicon crystals and devices based on them

    С. З. Зайнабидинов, P.I. Baranskiy, И. Н. Каримов +2

    МақолаElectromagnetic Effects on MaterialsSolid-State Electronics19951 иқтибос
    ABI

  2. Tensor electric properties of n-Si monocrystals

    И. Н. Каримов, Alisher Baxadirov, A.A. Khlbekov +1

    МақолаSemiconductor materials and interfaces19950 иқтибос
    ABI

  3. Determination of the surface state density on the semiconductor-dielectric interface in the structures Al-SiO 2 -Si and Al-SiO 2 -n-Si at low temperature

    G. Gulyamov, И. Н. Каримов, N. Yu. Sharibaev +1

    МақолаSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20100 иқтибос
    ABI

  4. Capacitance-Voltage Method for Detecting the local oxide trapped charge in SOI FinFET

    A.E. Abdikarimov, Mirzabahrom Foziljonov, И. Н. Каримов

    МақолаSemiconductor materials and devices20220 иқтибос
    ABI

  5. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

    A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

    МақолаSemiconductor materials and devicesEast European Journal of Physics20250 иқтибос
    ABI