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A.E. Abdikarimov

13 та иш

Urgench State University, Urgench, 220100, Uzbekistan

  1. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    МақолаSemiconductor materials and devicesTechnical Physics Letters20186 иқтибос
    ABI

  2. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

    A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

    МақолаAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20174 иқтибос
    ABI

  3. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

    A.E. Abdikarimov, Guillermo Indalecio, Enrique Comesaña +4

    МақолаAdvancements in Semiconductor Devices and Circuit Design20144 иқтибос
    ABI

  4. The effect of geometrical sizes on efficiency of vertical silicon tunnel junction solar cell for high solar concentration

    A. É. Atamuratov, B.Q. Jumaboyev, А. Yusupov +2

    МақолаSilicon and Solar Cell Technologies20222 иқтибос
    ABI

  5. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

    A. É. Atamuratov, M. M. Khalilloev, A.E. Abdikarimov +4

    МақолаAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20172 иқтибос
    ABI

  6. The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes

    A.E. Abdikarimov

    МақолаAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20201 иқтибос
    ABI

  7. The Effect of Height on the Efficiency of Vertical Silicon Tunnel Junction Solar Cell for High Solar Concentration

    A. É. Atamuratov, B.Q. Jumaboyev, A.E. Abdikarimov +2

    Мақолаsolar cell performance optimization20231 иқтибос
    ABI

  8. Memristors: types, characteristics and prospects of use as the main element of the future artificial intelligence

    А. Yusupov, A. É. Atamuratov, A.E. Abdikarimov +5

    МақолаAdvanced Memory and Neural Computing20220 иқтибос
    ABI

  9. Capacitance-Voltage Method for Detecting the local oxide trapped charge in SOI FinFET

    A.E. Abdikarimov, Mirzabahrom Foziljonov, И. Н. Каримов

    МақолаSemiconductor materials and devices20220 иқтибос
    ABI

  10. Electric conductivity of cotton and its dependence on fiber quality

    A.E. Abdikarimov, Khurshid Bozorov, О. О. Маматкаримов +1

    МақолаTextile materials and evaluationsAIP conference proceedings20250 иқтибос
    ABI

  11. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

    A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

    МақолаSemiconductor materials and devicesEast European Journal of Physics20250 иқтибос
    ABI

  12. Temperature-dependent dark I–V transport and barrier inhomogeneity in VTE-grown CdTe/Si heterojunction

    I.B. Sapaev, S.O. Sadullaev, Kh. N. Juraev +4

    МақолаSemiconductor materials and interfacesResults in Physics20260 иқтибос
    ABI

  13. Impact of the gate oxide material composition on the self-heating and short channel effects in nanosheet field effect transistor

    A.E. Atamuratov, D. R. Rajapov, M. M. Khalilloev +2

    ПрепринтAdvancements in Semiconductor Devices and Circuit DesignResearch Square20260 иқтибос
    ABI