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Effect of high hydrostatic pressure on the electrophysical properties of doped silicon crystals and devices based on them

С. З. ЗайнабидиновPhysics Department, Tashkent State University, Vuzgorodok, Tashkent, 700095, UzbekistanP.I. BaranskiyPhysics Department, Tashkent State University, Vuzgorodok, Tashkent, 700095, UzbekistanИ. Н. КаримовPhysics Department, Tashkent State University, Vuzgorodok, Tashkent, 700095, UzbekistanAlisher BaxadirovPhysics Department, Tashkent State University, Vuzgorodok, Tashkent, 700095, UzbekistanKh.Kh. KarimberdievPhysics Department, Tashkent State University, Vuzgorodok, Tashkent, 700095, Uzbekistan
Solid-State Electronicsjournal1995en
ABI

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