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G. A. Kushiev

6 та иш

Tashkent State Technical University, Tashkent, Uzbekistan

  1. Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics

    Н. Ф. Зикриллаев, G. A. Kushiev, Sergey V. Koveshnikov +3

    МақолаSemiconductor materials and interfacesEast European Journal of Physics20238 иқтибос
    ABI

  2. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

    Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

    МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20235 иқтибос
    ABI

  3. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

    Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

    МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20242 иқтибос
    ABI

  4. Silicon with Binary GexSi1 – x Compounds

    Н. Ф. Зикриллаев, K. S. Ayupov, N. Narkulov +3

    МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20241 иқтибос
    ABI

  5. Physical and Magnetic Properties of Silicon Doped with Impurity Germanium Atoms

    N. F. Zikrillayev, F. E. Urakova, A. Toshev +4

    МақолаSemiconductor materials and interfacesEast European Journal of Physics20250 иқтибос
    ABI

  6. The Influence of γ-Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Grown by the Czochralski Method

    Х. М. Илиев, К. А. Исмайлов, E. Zh. Kosbergenov +6

    МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20250 иқтибос
    ABI