O. B. Tursunov

1 та иш

Tashkent State Technical University, 100095, Tashkent, Uzbekistan

1. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

   Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

   МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20235 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.001403