Effect of the doping compensation on the photoluminescence spectra of ZnO doped by nitrogen
P. B. ParchinskiyNational University of Uzbekistan,Department of Physics,Tashkent,UzbekistanA. A. NebesniyNational University of Uzbekistan,Department of Physics,Tashkent,UzbekistanAslan NasirovNational University of Uzbekistan,Department of Physics,Tashkent,UzbekistanA. S. GazizulinaNational University of Uzbekistan,Department of Physics,Tashkent,UzbekistanAzamat O. ArslanovNational University of Uzbekistan,Department of Physics,Tashkent,UzbekistanР. А. НусретовTashkent State Technical University,Uzbek-Japan Center of Youth,Tashkent,UzbekistanSh. U. YuldashevNational University of Uzbekistan,Center of Nanotechnology Development,Tashkent,Uzbekistan
2022en
ABI
Аннотация
Photoluminescence measurements have been carried out to investigate the effects of the doping compensation on the near band edge emission lines in the nitrogen doped ZnO thin films grown on silicon substrates by using ultrasonic spray pyrolysis method. The results of the PL spectra for the N-doped layers show that the peak positions of the near band edge emission lines shift to higher energy with increasing temperature within the low-temperature region. The radiative recombinations of the carriers are related to the band-tail states, and the temperature-dependent blueshifts are analyzed by using a Gaussian distribution of the charged impurities.
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