Study of photoluminescence spectra of GaMnAs produced by low-temperature molecular beam epitaxy
P. B. ParchinskiyUlugbek National University of Uzbekistan, Tashkent, 700174, UzbekistanA. Yu. BobylevUlugbek National University of Uzbekistan, Tashkent, 700174, UzbekistanС. И. ВласовUlugbek National University of Uzbekistan, Tashkent, 700174, UzbekistanFu Chen YuChungnam National University, Daejeon, 305-764, Republic of KoreaDojin KimChungnam National University, Daejeon, 305-764, Republic of Korea
ABI
Аннотация
The luminescence spectra of the GaMnAs layers produced by low-temperature molecular beam epitaxy are studied at temperatures ranging from 4 to 150 K. In the spectra of the GaMnAs layers containing the MnAs clusters, local peaks at the energies of 1.36 and 1.33 eV are observed. It is shown that the red shift of the excitonic luminescence line depends on the Mn content in the semiconductor matrix.
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