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Dojin Kim

9 та иш

Chungnam National University, 305-764, Taejon, Korea

  1. Anisotropy of Negative Magnetoresistance in GaMnAs Epitaxial Layers

    A. S. Gazizulina, Aslan Nasirov, A. A. Nebesniy +2

    МақолаZnO doping and propertiesSemiconductors20213 иқтибос
    ABI

  2. Optical characteristics of MBE grown GaMnAs embedded with MnAs clusters

    P. B. Parchinskiy, Fu Yu, Se Young Jeong +4

    МақолаZnO doping and propertiesApplied Surface Science20062 иқтибос
    ABI

  3. Study of photoluminescence spectra of GaMnAs produced by low-temperature molecular beam epitaxy

    P. B. Parchinskiy, A. Yu. Bobylev, С. И. Власов +2

    МақолаZnO doping and propertiesSemiconductors20072 иқтибос
    ABI

  4. Anisotropy of magnetoresistance in Be Co-doped GaMnAs

    P. B. Parchinskiy, Fucheng Yu, P. Sekar +1

    МақолаZnO doping and propertiesJournal of Magnetism and Magnetic Materials20081 иқтибос
    ABI

  5. Transport properties in MnAs-precipitated GaMnAs layers

    P. B. Parchinskiy, Fu Yu, Cunxu Gao +4

    МақолаZnO doping and propertiesJournal of Electroceramics20060 иқтибос
    ABI

  6. Influence of phase segregation process on transport properties of dilute magnetic semiconductors

    P. B. Parchinskiy, Fucheng Yu, Cunxu Gao +4

    МақолаZnO doping and propertiesJournal of Magnetism and Magnetic Materials20060 иқтибос
    ABI

  7. Persistent photoconductivity phenomena in GaMnAs grown via molecular beam epitaxy

    P. B. Parchinskiy, Fu Yu, Yousuk Cho +1

    МақолаSemiconductor Quantum Structures and DevicesJournal of Crystal Growth20080 иқтибос
    ABI

  8. Effect of Be codoping on the photoluminescence spectra of GaMnAs

    Fucheng Yu, P. B. Parchinskiy, Dojin Kim +3

    МақолаZnO doping and propertiesCurrent Applied Physics20100 иқтибос
    ABI

  9. Анизотропия отрицательного магнетосопротивления в эапитаксиальных слоях GaMnAs

    А.С. Газизулина, А.А. Насиров, А.А. Небесный +2

    МақолаMagnetic Properties and ApplicationsФизика и техника полупроводников20200 иқтибос
    ABI