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D. A. Aronov

26 та иш

S. T. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbeki SSR, Tashkent

  1. Exclusion Effect in Semiconductors with Non-Injecting Contacts

    D. A. Aronov, P. I. Knigin, Yu. S. Korolev +1

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19847 иқтибос
    ABI

  2. On the theory of carrier exclusion in “pure” intrinsic semiconductors

    D. A. Aronov, R. Mamatkulov, V. V. Rubinov

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19815 иқтибос
    ABI

  3. The current characteristics of p—i—n and p+—i—p+ structures based on hydrogenated amorphous silicon at various temperatures and excitation levels

    D. A. Aronov, R. R. Kabulov, Yu. M. Yuabov

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19884 иқтибос
    ABI

  4. On the Theory of Photoconductivity and Photoelectromagnetic Effect at High Concentrations of Non‐Equilibrium Charge Carriers

    D. A. Aronov, V. Zaitova, E. P. Kotov

    МақолаCalibration and Measurement Techniquesphysica status solidi (b)19712 иқтибос
    ABI

  5. Quantum yield of current carriers excited by electron beams and electron penetration depth in thin GaP films

    S. A. Azimov, D. A. Aronov, V. M. Rubinov +1

    МақолаSemiconductor materials and interfacesphysica status solidi (a)19832 иқтибос
    ABI

  6. The Effects of Field and Temperature Heating in Intrinsic Semiconductors with Non-Injecting Contacts

    D. A. Aronov, R. Mamatkulov, V. V. Rubinov

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19822 иқтибос
    ABI

  7. On the theory of transient process after reversal of a p–i–n diode current from forward to reverse direction (I)

    D. A. Aronov, R. Mamatkulov

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19721 иқтибос
    ABI

  8. The Influence of Interband Recombination on the Photoconductivity and the Photoelectromagnetic Effect in Semiconductors with Deep Traps

    D. A. Aronov, V. Zaitova

    МақолаSolidification and crystal growth phenomenaphysica status solidi (b)19731 иқтибос
    ABI

  9. Transient Processes of Current Reversal in MIS Structures with Majority and Minority Charge Carriers

    S. A. Asimov, D. A. Aronov, D. K. Isamukhamedova +1

    МақолаSemiconductor materials and interfacesphysica status solidi (a)19821 иқтибос
    ABI

  10. The influence of heating on the characteristics of the electron-excited conduction in gallium phosphide films

    S. A. Azimov, D. A. Aronov, V. M. Rubinov +1

    МақолаSemiconductor Quantum Structures and Devicesphysica status solidi (a)19831 иқтибос
    ABI

  11. The criteria of diffusionless solution validity in the theory of exclusion in “super-pure” semiconductors

    D. A. Aronov, R. Mamatkulov, V. V. Rubinov

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19851 иқтибос
    ABI

  12. The Field and Spectrum Dependences of Impurity Photoconductivity with Exclusion in Compensated Semiconductors

    D. A. Aronov, B. R. Mamatkulov

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19861 иқтибос
    ABI

  13. The Influence of Exclusion on Light Absorption by Free Carriers in “Pure” (almost Intrinsic) Semiconductors with Non-Injecting Contacts

    D. A. Aronov, V. V. Rubinov

    МақолаSilicon Nanostructures and Photoluminescencephysica status solidi (a)19821 иқтибос
    ABI

  14. Differential Resistance and Diffusion Capacitance of Junctions in p-n-n+ Structures at high Injection Levels

    D. A. Aronov, Ya. P. Kotov

    БобSilicon and Solar Cell Technologies19710 иқтибос
    ABI

  15. On the theory of transient process after reversal of a p–i–n diode current from forward to reveres direction (II)

    D. A. Aronov, R. Mamatkulov

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19730 иқтибос
    ABI

  16. The influence of carrier capture in deep traps on the small-signal characteristics of double-injection currents in semiconductors

    D. A. Aronov, E. P. Kotov, Ya. P. Kotov

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19750 иқтибос
    ABI

  17. The Influence of Surface Recombination on the Photoelectromagnetic (PEM) Effect in Semiconductors with Deep Traps

    D. A. Aronov, V. Zaitova

    МақолаSurface and Thin Film Phenomenaphysica status solidi (b)19810 иқтибос
    ABI

  18. On the Minimum Coefficient of Light Absorption by Free Carriers under the Conditions of Exclusion in “Pure” Semiconductors with Non-Injecting Contacts

    D. A. Aronov, V. V. Rubinov

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19830 иқтибос
    ABI

  19. The Capacitance and Characteristic Relaxation Times at Carrier Exclusion in Compensated Semiconductors with Deep Traps and Non-Injecting Contacts

    D. A. Aronov, B. R. Mamatkulov

    МақолаAdvanced Research in Systems and Signal Processingphysica status solidi (a)19840 иқтибос
    ABI

  20. On the Mechanism of Current Passage in Gallium Phosphide Films Excited by Light or a Beam of Accelerated Electrons

    S. A. Azimov, D. A. Aronov, V. M. Rubinov +1

    МақолаSurface and Thin Film Phenomenaphysica status solidi (a)19840 иқтибос
    ABI

  21. Use of the strong exclusion effect in ionizing radiationdetectors based on “pure” semiconductors with non-injecting contacts

    D. A. Aronov, B. N. Zaveryukhin, Р. А. Муминов +2

    МақолаAdvanced Semiconductor Detectors and Materialsphysica status solidi (a)19860 иқтибос
    ABI

  22. The influence of inversion layer on the characteristics of the contact-adjoining layer in solar-cell silicon Schottky MTIS structures

    D. A. Aronov, D. K. Isamukhamedova, Yu. M. Yuabov

    МақолаSemiconductor materials and interfacesphysica status solidi (a)19860 иқтибос
    ABI

  23. On the Theory of Majority-Carrier Silicon Solar-Cell MTIS Structures with a Schottky Barrier

    D. A. Aronov, D. K. Isamukhamedova, Yu. M. Yuabov

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19860 иқтибос
    ABI

  24. The Influence of Field-Induced Variation in Majority Carrier Lifetime Caused by Photostimulated Heating on Impurity Photoconductivity of Compensated Semiconductors with Exclusion

    D. A. Aronov, B. R. Mamatkulov

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19870 иқтибос
    ABI

  25. The influence of diffusion on the carrier exclusion effect in high-purity (intrinsic) semiconductors with non-injecting contacts

    D. A. Aronov, B. R. Mamatkulov, R. Mamatkulov

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19890 иқтибос
    ABI