Acoustostimulated change in the optical absorption coefficient of gallium arsenide in the 0.81–1.77 μm wavelength range
N. N. ZaveryukhinaPhysical Engineering Institute, Solar Physics Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanE. B. ZaveryukhinaNational University of Uzbekistan, Tashkent, UzbekistanB. N. ZaveryukhinPhysical Engineering Institute, Solar Physics Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Аннотация
The effect of ultrasonic waves on the spectral absorption coefficient of gallium arsenide (GaAs) in the 0.81–1.77 μm wavelength range. The treatment of GaAs single crystals with ultrasonic waves leads to a change in their coefficients of absorption of electromagnetic radiation. This phenomenon is related to the fact that an acoustic wave, being an energy carrier, modified a defect system of the crystal and produces a redistribution of impurities in the crystal lattice. The interaction of photons with acoustogenerated defects changes the optical absorption coefficient near the edge of the fundamental absorption band of GaAs.
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