Alternating-strain-induced drift of nonequilibrium charge carriers in GaAs photodetectors
B. N. ZaveryukhinPhysical Engineering Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanN. N. ZaveryukhinaPhysical Engineering Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanР. А. МуминовPhysical Engineering Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanOybek TursunkulovPhysical Engineering Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Аннотация
The drift of nonequilibrium charge carriers in GaAs was studied. It is demonstrated that the electric and acoustic (ultrasonic) fields significantly influence the transport of charge carriers in photodetectors based on piezoelectric semiconductors with traps.
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