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Ahmed Yusupov

13 та иш

Department of Electronics and Radio Engineering, Tashkent University of Information Technologies, A. Temur Str., 108, Tashkent 100200, Uzbekistan

  1. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

    A. É. Atamuratov, Ahmed Yusupov, Zamira Atamuratova +2

    МақолаSemiconductor materials and devicesApplied Sciences20203 иқтибос
    ABI

  2. Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET

    A.E. Atamuratov, B.O. Jabbarova, M. M. Khalilloev +3

    МақолаSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics20222 иқтибос
    ABI

  3. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

    МақолаSemiconductor materials and devicesApplied Sciences20202 иқтибос
    ABI

  4. On the Convergence of an Efficient and Robust Dynamic Neural Network Concept with Application to Solving Traveling Salesman Problems

    Elnur Norov, Shakhzod Tashmetov, Khabibullo Nosirov +3

    МақолаMetaheuristic Optimization Algorithms ResearchWSEAS TRANSACTIONS ON CIRCUITS AND SYSTEMS20221 иқтибос
    ABI

  5. Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    МақолаSemiconductor materials and devices20241 иқтибос
    ABI

  6. Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS2-Based MOSFETs

    A. É. Atamuratov, Khushnudbek Sh. Saparov, Ahmed Yusupov +1

    Мақола2D Materials and ApplicationsApplied Sciences20231 иқтибос
    ABI

  7. The amplitude of RTN in nanometer SOI FinFET with different channel shape

    Ahmed Yusupov, A. É. Atamuratov, Azamat E. Abdikarimov +2

    МақолаAdvancements in Semiconductor Devices and Circuit DesignDevelopments of Artificial Intelligence Technologies in Computation and Robotics20200 иқтибос
    ABI

  8. Formation and electrical properties of anisotype heterojunctions p-Cu2ZnSnSe4 /n-GaAs

    Ahmed Yusupov, Abdukhalil A. Tulyaganov, Zafar Turaev +2

    МақолаChalcogenide Semiconductor Thin FilmsDevelopments of Artificial Intelligence Technologies in Computation and Robotics20200 иқтибос
    ABI

  9. Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +2

    МақолаAdvancements in Semiconductor Devices and Circuit Designe-Journal of Surface Science and Nanotechnology20210 иқтибос
    ABI

  10. Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs

    Zamira Atamuratova, Ahmed Yusupov, Jean Chamberlain Chedjou +1

    МақолаSemiconductor materials and devicese-Journal of Surface Science and Nanotechnology20220 иқтибос
    ABI

  11. Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +5

    МақолаAdvancements in Semiconductor Devices and Circuit DesignMicro and Nanostructures20240 иқтибос
    ABI

  12. From Evolution to Prospects: Mechanisms, Advances, and Challenges of Avalanche Photodiodes

    Ahmed Yusupov, Elaman Nurullaev, K. Sattarov

    МақолаAdvanced Optical Sensing Technologies20250 иқтибос
    ABI

  13. Field-Effect Photodetectors Based on TMDCs: State of the Art and Future Trends

    Ahmed Yusupov, Elaman Nurullaev, K. Sattarov +1

    Мақола2D Materials and Applications20250 иқтибос
    ABI