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Vitalii V. Kozlovski

12 та иш

St Petersburg State Polytechnical University, St Petersburg 195251, Russia

  1. Positron annihilation on defects in silicon irradiated with 15 MeV protons

    N.Yu. Arutyunov, Mohamed Elsayed, R. Krause‐Rehberg +3

    МақолаMuon and positron interactions and applicationsJournal of Physics Condensed Matter20121 иқтибос
    ABI

  2. Positron probing of open vacancy volume of phosphorus‐vacancy complexes in float‐zone n‐type silicon irradiated by 0.9‐MeV electrons and by 15‐MeV protons

    N.Yu. Arutyunov, V. V. Emtsev, Mohamed Elsayed +4

    МақолаMuon and positron interactions and applicationsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics20171 иқтибос
    ABI

  3. Monovacancy–As complexes in proton-irradiated Ge studied by positron lifetime spectroscopy

    Mohamed Elsayed, N.Yu. Arutyunov, R. Krause‐Rehberg +3

    МақолаMuon and positron interactions and applicationsActa Materialia20141 иқтибос
    ABI

  4. Positron probing of phosphorus-vacancy complexes in silicon irradiated with 15 MeV protons

    N.Yu. Arutyunov, V. V. Emtsev, R. Krause‐Rehberg +4

    МақолаMuon and positron interactions and applicationsJournal of Physics Conference Series20151 иқтибос
    ABI

  5. Positron probing of disordered regions in neutron‐irradiated silicon

    N.Yu. Arutyunov, Nick S. Bennett, Neil M. Wight +4

    МақолаMuon and positron interactions and applicationsphysica status solidi (b)20161 иқтибос
    ABI

  6. Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN

    V. V. Emtsev, V. Yu. Davydov, I. N. Goncharuk +7

    МақолаGaN-based semiconductor devices and materialsMaterials science forum19970 иқтибос
    ABI

  7. Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation

    A. А. Lebedev, D. V. Davydov, Anatoly M. Strel’chuk +4

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 иқтибос
    ABI

  8. Radiation Hardness of Silicon Carbide

    A. А. Lebedev, Vitalii V. Kozlovski, N. B. Strokan +4

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 иқтибос
    ABI

  9. Modification of the Silicon Carbide by Proton Irradiation

    Е. В. Богданова, Vitalii V. Kozlovski, D. S. Rumyantsev +2

    МақолаSilicon and Solar Cell TechnologiesMaterials science forum20040 иқтибос
    ABI

  10. Influence of Irradiation on Excess Currents in SiC pn Structures

    Anatoly M. Strel’chuk, Vitalii V. Kozlovski, A. А. Lebedev +1

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20050 иқтибос
    ABI

  11. Formation and annealing of vacancy-P complexes in proton-irradiated germanium

    Mohamed Elsayed, N.Yu. Arutyunov, R. Krause‐Rehberg +2

    МақолаMuon and positron interactions and applicationsActa Materialia20150 иқтибос
    ABI

  12. Effect of Electron Irradiation on Electrical and Electroluminescent Properties of n<sup>+</sup>p 4H-SiC Structures

    Anatoly M. Strel’chuk, A. E. Kalyadin, A. А. Lebedev +3

    МақолаSemiconductor materials and devicesMaterials science forum20180 иқтибос
    ABI