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D. V. Davydov

8 та иш

Russian Academy of Sciences

  1. Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

    A. А. Lebedev, Anatoly M. Strel’chuk, N.S. Savkina +4

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20032 иқтибос
    ABI

  2. Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam

    A. А. Lebedev, A. I. Veı̆nger, D. V. Davydov +3

    МақолаSilicon Carbide Semiconductor TechnologiesJournal of Applied Physics20001 иқтибос
    ABI

  3. Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

    Anatoly M. Strel’chuk, A. А. Lebedev, D. V. Davydov +8

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20041 иқтибос
    ABI

  4. Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation

    A. А. Lebedev, D. V. Davydov, Anatoly M. Strel’chuk +4

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 иқтибос
    ABI

  5. p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization

    A. А. Lebedev, Anatoly M. Strel’chuk, D. V. Davydov +5

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20020 иқтибос
    ABI

  6. Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions

    Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +7

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 иқтибос
    ABI

  7. Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers

    Evgenia V. Kalinina, G. Kholuyanov, Anatoly M. Strel’chuk +4

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20040 иқтибос
    ABI

  8. Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions

    Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +6

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20050 иқтибос
    ABI