G. Kholuyanov

7 та иш

Ioffe Physicotechnical Institute RAS

1. Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices

   Evgenia V. Kalinina, G. Kholuyanov, Yu. A. Goldberg +8

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20022 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.603414

2. Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers

   Evgenia V. Kalinina, G. Kholuyanov, A. А. Ситникова +6

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20031 иқтибос

   ABIABI:AkademIndex/openalex/2003.article.000128

3. High Energy Resolution Detectors Based on 4H-SiC

   Alexander M. Ivanov, Evgenia V. Kalinina, G. Kholuyanov +5

   МақолаParticle Detector Development and PerformanceMaterials science forum20051 иқтибос

   ABIABI:AkademIndex/openalex/2005.article.000096

4. Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions

   Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +7

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 иқтибос

   ABIABI:AkademIndex/openalex/2003.article.000141

5. Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers

   Evgenia V. Kalinina, G. Kholuyanov, Anatoly M. Strel’chuk +4

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20040 иқтибос

   ABIABI:AkademIndex/openalex/2004.article.000109

6. Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions

   Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +6

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20050 иқтибос

   ABIABI:AkademIndex/openalex/2005.article.000233

7. Radiation Hard Devices Based on SiC

   Evgenia V. Kalinina, Anatoly M. Strel’chuk, A. А. Lebedev +3

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20060 иқтибос

   ABIABI:AkademIndex/openalex/2006.article.000250