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Evgenia V. Kalinina

18 та иш

Ioffe Physicotechnical Institute RAS

  1. Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method

    N.I. Kuznetsov, D. A. Bauman, A.V. Gavrilin +1

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20022 иқтибос
    ABI

  2. Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures

    Anatoly M. Strel’chuk, Evgenia V. Kalinina, Andrey O. Konstantinov +1

    МақолаSilicon and Solar Cell TechnologiesMaterials science forum20052 иқтибос
    ABI

  3. Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices

    Evgenia V. Kalinina, G. Kholuyanov, Yu. A. Goldberg +8

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20022 иқтибос
    ABI

  4. Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers

    Evgenia V. Kalinina, G. Kholuyanov, A. А. Ситникова +6

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20031 иқтибос
    ABI

  5. High Energy Resolution Detectors Based on 4H-SiC

    Alexander M. Ivanov, Evgenia V. Kalinina, G. Kholuyanov +5

    МақолаParticle Detector Development and PerformanceMaterials science forum20051 иқтибос
    ABI

  6. Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN

    V. V. Emtsev, V. Yu. Davydov, I. N. Goncharuk +7

    МақолаGaN-based semiconductor devices and materialsMaterials science forum19970 иқтибос
    ABI

  7. Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC

    Evgenia V. Kalinina, A. S. Zubrilov, N.I. Kuznetsov +4

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 иқтибос
    ABI

  8. 4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density

    Evgenia V. Kalinina, A. S. Zubrilov, В. А. Соловьев +6

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 иқтибос
    ABI

  9. Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions

    Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +7

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 иқтибос
    ABI

  10. Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers

    Evgenia V. Kalinina, G. Kholuyanov, Anatoly M. Strel’chuk +4

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20040 иқтибос
    ABI

  11. Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions

    Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +6

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20050 иқтибос
    ABI

  12. Radiation Hard Devices Based on SiC

    Evgenia V. Kalinina, Anatoly M. Strel’chuk, A. А. Lebedev +3

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20060 иқтибос
    ABI

  13. Investigation of 4H-SiC Layers Implanted by Al Ions

    E. Kolesnikova, Evgenia V. Kalinina, A. А. Ситникова +2

    МақолаSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20070 иқтибос
    ABI

  14. 4H-SiC High Temperature Spectrometers

    Evgenia V. Kalinina, N. B. Strokan, Alexander M. Ivanov +5

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20070 иқтибос
    ABI

  15. 4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C

    Alexander M. Ivanov, Evgenia V. Kalinina, N. B. Strokan +1

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20090 иқтибос
    ABI

  16. Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions

    Evgenia V. Kalinina, M. V. Zamoryanskaya, E. Kolesnikova +1

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20090 иқтибос
    ABI

  17. Far-Action Defects Formation and Gettering in 6H-SiC Lely Crystals Irradiated by Bi

    D.B. Shustov, E. Kolesnikova, Evgenia V. Kalinina +2

    МақолаSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20090 иқтибос
    ABI

  18. Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure

    Anatoly M. Strel’chuk, Evgenia V. Kalinina, A. А. Lebedev

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20130 иқтибос
    ABI