A. S. Zubrilov

7 та иш

Russian Academy of Sciences

1. 4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates

   N.I. Kuznetsov, Andrey Morozov, D. A. Bauman +8

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20002 иқтибос

   ABIABI:AkademIndex/openalex/2000.article.000164

2. Optically Transparent 6H-Silicon Carbide

   A. Bakin, Sergey I. Dorozhkin, A. S. Zubrilov +2

   МақолаThin-Film Transistor TechnologiesMaterials science forum19980 иқтибос

   ABIABI:AkademIndex/openalex/1998.article.000261

3. Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC

   Evgenia V. Kalinina, A. S. Zubrilov, N.I. Kuznetsov +4

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 иқтибос

   ABIABI:AkademIndex/openalex/2000.article.000091

4. Growth of SiC and GaN on Porous Buffer Layers

   M. G. Mynbaeva, N.S. Savkina, A. S. Tregubova +12

   МақолаGaN-based semiconductor devices and materialsMaterials science forum20000 иқтибос

   ABIABI:AkademIndex/openalex/2000.article.000163

5. 4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density

   Evgenia V. Kalinina, A. S. Zubrilov, В. А. Соловьев +6

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 иқтибос

   ABIABI:AkademIndex/openalex/2000.article.000171

6. Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions

   Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +7

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 иқтибос

   ABIABI:AkademIndex/openalex/2003.article.000141

7. Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures

   A. А. Lebedev, Oleg Ledyaev, Anatoly M. Strel’chuk +6

   МақолаGaN-based semiconductor devices and materialsMaterials science forum20060 иқтибос

   ABIABI:AkademIndex/openalex/2006.article.000281