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N. B. Strokan

10 та иш

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

  1. Carrier transport in a diode base with locally nonuniform recombination properties

    А. В. Иванов, N. B. Strokan, V. B. Shuman

    МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters19971 иқтибос
    ABI

  2. High Energy Resolution Detectors Based on 4H-SiC

    Alexander M. Ivanov, Evgenia V. Kalinina, G. Kholuyanov +5

    МақолаParticle Detector Development and PerformanceMaterials science forum20051 иқтибос
    ABI

  3. Determination of the uniformity of the carrier lifetime in a material from the profile of the amplitude spectrum of an ion detector

    N. B. Strokan

    МақолаAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19980 иқтибос
    ABI

  4. Behavior of epitaxial GaAs layers as α particle detectors

    V. M. Botnaryuk, Yu. V. Zhilyaev, А. М. Иванов +2

    МақолаAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19980 иқтибос
    ABI

  5. On the generation of radiation defects by accelerated ions in silicon

    А. В. Иванов, N. B. Strokan

    МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters19980 иқтибос
    ABI

  6. Radiation Hardness of Silicon Carbide

    A. А. Lebedev, Vitalii V. Kozlovski, N. B. Strokan +4

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 иқтибос
    ABI

  7. p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation

    Alexander M. Ivanov, N. B. Strokan, Denis Davydov +4

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 иқтибос
    ABI

  8. Radiation Hard Devices Based on SiC

    Evgenia V. Kalinina, Anatoly M. Strel’chuk, A. А. Lebedev +3

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20060 иқтибос
    ABI

  9. 4H-SiC High Temperature Spectrometers

    Evgenia V. Kalinina, N. B. Strokan, Alexander M. Ivanov +5

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20070 иқтибос
    ABI

  10. 4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C

    Alexander M. Ivanov, Evgenia V. Kalinina, N. B. Strokan +1

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20090 иқтибос
    ABI