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M. V. Zamoryanskaya

6 та иш

loffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia

  1. Cathodoluminescence from crystalline phases in a ZrO2-SiO2-CeO2 ceramic

    M. V. Zamoryanskaya, Boris E. Burakov

    МақолаLuminescence Properties of Advanced MaterialsInorganic Materials20000 иқтибос
    ABI

  2. Modification of Silicon Oxide by High Energy Electron Beam

    E. Kolesnikova, A. А. Ситникова, В. И. Соколов +1

    МақолаSilicon Nanostructures and PhotoluminescenceDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20050 иқтибос
    ABI

  3. Investigation of 4H-SiC Layers Implanted by Al Ions

    E. Kolesnikova, Evgenia V. Kalinina, A. А. Ситникова +2

    МақолаSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20070 иқтибос
    ABI

  4. Silicon Cluster Aggregation in Silica Layers

    Hans Joachim Fitting, Lena F. Kourkoutis, Roushdey Salh +4

    МақолаSilicon Nanostructures and PhotoluminescenceDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20090 иқтибос
    ABI

  5. Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions

    Evgenia V. Kalinina, M. V. Zamoryanskaya, E. Kolesnikova +1

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20090 иқтибос
    ABI

  6. Far-Action Defects Formation and Gettering in 6H-SiC Lely Crystals Irradiated by Bi

    D.B. Shustov, E. Kolesnikova, Evgenia V. Kalinina +2

    МақолаSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20090 иқтибос
    ABI