Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement
A. É. AtamuratovHeat Physics Department, Academy of Sciences of Uzbekistan, Tashkent, 700135, UzbekistanD. U. MatrasulovHeat Physics Department, Academy of Sciences of Uzbekistan, Tashkent, 700135, UzbekistanP. K. KhabibullaevHeat Physics Department, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan
ABI
Аннотация
Аннотация мавжуд эмас.