Ушбу иш иқтибос қилган ишлар

8 та иш

Иш: Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement

1. The Physics of Semiconductor Devices

   Китоб202414 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.357508

2. Experimental Assessment of the Nonuniform Radiation-Induced Space-Charge Distribution in the Surface Region of Silicon

   A. É. Atamuratov, А. Yusupov, Khidir A. Adinaev

   МақолаAdvanced Energy Technologies and Civil Engineering InnovationsInorganic Materials20015 иқтибос

   ABIABI:AkademIndex/openalex/2001.article.000094

3. Charge storage in a nitride-oxide-silicon medium by scanning capacitance microscopy

   R. C. Barrett, C. F. Quate

   Мақола19915 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.568586

4. Hi-MNOS II technology for a 64-kbit byte-erasable 5-V-only EEPROM

   Y. Yatsuda, Shinji Nabetani, Ken Uchida +5

   Мақола19853 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.568587

5. EVIDENCE OF HOLE INJECTION AND TRAPPING IN SILICON NITRIDE FILMS PREPARED BY REACTIVE SPUTTERING

   Sheng Hu, D. R. Kerr, L. V. Gregor

   Мақола19672 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.568589

6. Rotating MNOS disk memory device

   Soichi Iwamura, Yuichiro Nishida, K. Hashimoto

   Мақола19812 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.568591

7. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.568588

8. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.568590