Ушбу ишга иқтибос қилган ишлар

4 та иш

Иш: Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement

1. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

   A. É. Atamuratov, Ahmed Yusupov, Zamira Atamuratova +2

   МақолаSemiconductor materials and devicesApplied Sciences20203 иқтибос

   ABIABI:AkademIndex/openalex/2020.article.000900

2. Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer

   Zamira Atamuratova, А. Yusupov, B. O. Khalikberdiev +1

   МақолаSemiconductor materials and devicesTechnical Physics20193 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.570281

3. Capacitance-Voltage Method for Detecting the local oxide trapped charge in SOI FinFET

   A.E. Abdikarimov, Mirzabahrom Foziljonov, И. Н. Каримов

   МақолаSemiconductor materials and devices20220 иқтибос

   ABIABI:AkademIndex/openalex/2022.article.011220

4. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

   A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

   МақолаSemiconductor materials and devicesEast European Journal of Physics20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.009018