Н. Норкулов

6 та иш

Tashkent State Technical University

1. Some features of chemical interaction between a fast diffusing impurity and a group VI element in silicon

   M. K. Bakhadirkhanov, Sh. I. Askarov, Н. Норкулов

   МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19947 иқтибос

   ABIABI:AkademIndex/openalex/1994.article.000008

2. Interaction between multiply charged manganese nanoclusters and sulfur atoms in silicon

   Z.M. Saparniyazova, М. К. Бахадырханов, О. Э. Саттаров +4

   МақолаSemiconductor materials and interfacesInorganic Materials20125 иқтибос

   ABIABI:AkademIndex/openalex/2012.article.000130

3. Elaboration of physical fundamentals of nanosized structures on the basis of S++Mn−− and Se++Mn−− molecule formation in silicon lattice

   М. К. Бахадырханов, U. X. Sodikov, Н. Ф. Зикриллаев +1

   МақолаChalcogenide Semiconductor Thin FilmsSurface Engineering and Applied Electrochemistry20071 иқтибос

   ABIABI:AkademIndex/openalex/2007.article.000255

4. Electric Field-Stimulated Photoconductivity in Silicon with Manganese Atom Nanoclusters in the Range of 3–8 μm

   M. K. Bakhadirkhanov, С. Б. Исамов, Sh. N. Ibodullaev +2

   МақолаSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20200 иқтибос

   ABIABI:AkademIndex/openalex/2020.article.004106

5. Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon

   Н. Ф. Зикриллаев, S. Koveshnikov, Kh. S. Turekeev +2

   МақолаSilicon and Solar Cell TechnologiesPhysics of the Solid State20220 иқтибос

   ABIABI:AkademIndex/openalex/2022.article.002687

6. Physical and Magnetic Properties of Silicon Doped with Impurity Germanium Atoms

   N. F. Zikrillayev, F. E. Urakova, A. Toshev +4

   МақолаSemiconductor materials and interfacesEast European Journal of Physics20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.003073