Elaboration of physical fundamentals of nanosized structures on the basis of S++Mn−− and Se++Mn−− molecule formation in silicon lattice
М. К. БахадырхановTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 70095, Republic of UzbekistanU. X. SodikovTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 70095, Republic of UzbekistanН. Ф. ЗикриллаевTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 70095, Republic of UzbekistanН. НоркуловTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 70095, Republic of Uzbekistan
ABI
Аннотация
One possible way to create nanosized structures on the basis of the formation of molecules (S++Mn−−) and (Se++Mn−−) among impurity atoms S, Se, Mn in the silicon lattice is described in the work. Relationships between the concentration of molecules (S++Mn−−) and (Se++Mn−−) and the concentration of impurity atoms are established.
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