Maqola

Elaboration of physical fundamentals of nanosized structures on the basis of S++Mn−− and Se++Mn−− molecule formation in silicon lattice

М. К. БахадырхановTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 70095, Republic of UzbekistanU. X. SodikovTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 70095, Republic of UzbekistanН. Ф. ЗикриллаевTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 70095, Republic of UzbekistanН. НоркуловTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 70095, Republic of Uzbekistan

Surface Engineering and Applied Electrochemistryjournal2007en

ABI

Annotatsiya

One possible way to create nanosized structures on the basis of the formation of molecules (S++Mn−−) and (Se++Mn−−) among impurity atoms S, Se, Mn in the silicon lattice is described in the work. Relationships between the concentration of molecules (S++Mn−−) and (Se++Mn−−) and the concentration of impurity atoms are established.

Mavzular

Chalcogenide Semiconductor Thin Films Silicon Nanostructures and Photoluminescence Laser-Ablation Synthesis of Nanoparticles

Identifikatorlar

DOI: 10.3103/s106837550705016x

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