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Иш: Elaboration of physical fundamentals of nanosized structures on the basis of S++Mn−− and Se++Mn−− molecule formation in silicon lattice

1. Some features of chemical interaction between a fast diffusing impurity and a group VI element in silicon

   M. K. Bakhadirkhanov, Sh. I. Askarov, Н. Норкулов

   МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19947 иқтибос

   ABIABI:AkademIndex/openalex/1994.article.000008